US2015200117A1PendingUtilityA1

Semiconductor crystal body processing method and semiconductor crystal body processing device

Assignee: MURATA MANUFACTURING COPriority: Jan 20, 2010Filed: Mar 27, 2015Published: Jul 16, 2015
Est. expiryJan 20, 2030(~3.5 yrs left)· nominal 20-yr term from priority
H10P 72/0432H10P 72/0428H10P 72/0431G02B 1/02H01L 21/67092H01L 21/67098
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Claims

Abstract

A semiconductor crystal body processing method includes providing a semiconductor crystal body, sandwiching the semiconductor crystal body between a pair of conductive pressurizing tools, applying a pulse-like current between the pair of pressurizing tools to heat the semiconductor crystal body to a target temperature equal to or higher than a temperature at which the semiconductor crystal body is plastically deformed by pressurization and lower than its melting point, and applying pressure and a pulse-like current between the pair of pressurizing tools to thereby maintain the temperature of the semiconductor crystal body at the target temperature and mold the semiconductor crystal body into a target shape by plastic deformation.

Claims

exact text as granted — not AI-modified
1 . A semiconductor crystal body processing device, comprising:
 a pulse current generator;   a pair of pressurizing tools comprising a conductive material, disposed to sandwich a semiconductor crystal body workpiece therebetween, and to apply a pressure to the semiconductor crystal body, wherein said tools are connected to the pulse current generator;   a temperature detecting element disposed in or near the pressurizing tools; and   a regulator adapted to control the pulse current applied to the pair of pressurizing tools and the amount of pressure applied to the workpiece by the pair of pressurizing tolls such that the temperature measured by the temperature detecting element reaches or maintains a target temperature.   
     
     
         2 . A semiconductor crystal body processing device according to  claim 1 , wherein the regulator comprises a feedback device for conveying temperature measurement information from the temperature detector to the pulse current generator. 
     
     
         3 . A semiconductor crystal body processing device according to  claim 2 , wherein the pair of pressurizing tools are disposed in a die. 
     
     
         4 . A semiconductor crystal body processing device according to  claim 3 , wherein the temperature detector is disposed in at least one of the pair of pressurizing tools. 
     
     
         5 . A semiconductor crystal body processing device according to  claim 3 , wherein the temperature detector is in the die. 
     
     
         6 . A semiconductor crystal body processing device according to  claim 1 , wherein the temperature detecting element is disposed in at least one of the pair of pressurizing tools.

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