Hardmask capping layer

Abstract

A capping layer is formed over a hardmask layer to increase the etch resistance and overall performance of the hardmask layer. Embodiments include a hardmask layer formed over a substrate and a capping layer formed on the hardmask layer, the capping layer including a stack of at least two nanolayers.

What is claimed is: 
     
         1 . A device comprising:
 a substrate;   a hardmask layer over the substrate; and   a capping layer on the hardmask layer, the capping layer comprising a stack of at least two nanolayers.   
     
     
         2 . The device according to  claim 1 , wherein a thickness of the capping layer and the hardmask layer is less than 40 nm. 
     
     
         3 . The device according to  claim 2 , wherein a thickness of the capping layer and the hardmask layer is 30 to 40 nm. 
     
     
         4 . The device according to  claim 1 , wherein a thickness of the capping layer is 10 to 30 nm. 
     
     
         5 . The device according to  claim 1 , wherein the capping layer comprises nanolayers of silicon carbide (SiC). 
     
     
         6 . The device according to  claim 1 , wherein the capping layer comprises alternating nanolayers of SiC and silicon carbon nitride (SiCN). 
     
     
         7 . The device according to  claim 1 , wherein the capping layer comprises nanolayers of turbostatic boron nitride (t-BN), cubic boron nitride (c-BN), or a combination thereof. 
     
     
         8 . The device according to  claim 1 , wherein the capping layer comprises alternating nanolayers of BN and titanium nitride (TiN). 
     
     
         9 . The device according to  claim 1 , wherein the capping layer comprises alternating nanolayers of SiC and BN. 
     
     
         10 . A device comprising:
 a substrate;   a hardmask layer over the substrate; and   a capping layer on the hardmask layer, the capping layer comprising a stack of either:   at least three alternating nanolayers of silicon carbide (SiC) and silicon carbon nitride (SiCN), at least three alternating nanolayers of boron nitride (BN) and titanium nitride (TiN), or at least three alternating nanolayers of SiC and BN.   
     
     
         11 . The device according to  claim 10 , wherein a thickness of the capping layer and the hardmask layer is less than 40 nm. 
     
     
         12 . The device according to  claim 11 , wherein a thickness of the capping layer and the hardmask layer is 30 to 40 nm. 
     
     
         13 . The device according to  claim 10 , wherein a thickness of the capping layer is 10 to 30 nm. 
     
     
         14 . A device comprising:
 a substrate;   a titanium nitride (TiN) hardmask layer over the substrate; and   a capping layer on the TiN hardmask layer to a thickness of 10 to 30 nm, the capping layer comprises a stack of either: at least 20 alternating nanolayers of silicon carbide (SiC) and silicon carbon nitride (SiCN), at least 20 alternating nanolayers of boron nitride (BN) and titanium nitride (TiN), or at least 20 alternating nanolayers of SiC and BN, wherein a total thickness of the TiN hardmask layer and the capping layer ranges from 30 to 40 nm.   
     
     
         15 . A device comprising:
 a titanium nitride (TiN) hardmask layer; and   a capping layer on the TiN hardmask layer, the capping layer comprises a stack of either: alternating nanolayers of silicon carbide (SiC) and silicon carbon nitride (SiCN), alternating nanolayers of boron nitride (BN) and titanium nitride (TiN), or alternating nanolayers of SiC and BN.   
     
     
         16 . The device of  claim 15 , wherein the capping layer stack comprises at least 20 alternating layers. 
     
     
         17 . The device of  claim 15 , wherein the thickness of the capping layer ranges from 10 to 30 nm. 
     
     
         18 . The device of  claim 15 , wherein the TiN hardmask layer is disposed on an interlayer dielectric (ILD) or substrate. 
     
     
         19 . The device of  claim 15 , wherein each of the nanolayers is formed to a thickness of 0.5 to 10 nm. The device of  claim 15 , wherein a total thickness of the TiN hardmask layer and the capping layer ranges from 30 to 40 nm.