Etching liquid, etching method, and method of manufacturing solder bump

Abstract

An etching Liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

What is claimed is: 
     
         1 . An etching liquid for etching a copper layer in a multilayer structure including the copper layer and a cobalt layer, comprising:
 at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid; and   hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.   
     
     
         2 . The etching liquid according to  claim 1 , further comprising:
 a pH adjuster including at least one of an aqueous sodium hydroxide, an aqueous solution of potassium hydroxide, an aqueous solution of ammonia, and an alkaline ionized water.   
     
     
         3 . The etching liquid according to  claim 1 , wherein the at least one acid is citric acid, and a concentration of citrate ions in the etching liquid is equal to or more than 0.2 mol/L. 
     
     
         4 . The etching liquid according to  claim 1 , wherein a concentration of the hydrogen peroxide is in a range of 0.7% to 10% by weight. 
     
     
         5 . An etching method, comprising:
 preparing an etching liquid including hydrogen peroxide and at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, the etching liquid having pH in a range of 4.3 to 5.5; and   bringing a multilayer structure including a copper layer and a cobalt layer into contact with the etching liquid to thereby etch the copper layer.   
     
     
         6 . The etching method according to  claim 5 , wherein the etching liquid further includes a pH adjuster including at least one of an aqueous sodium hydroxide, an aqueous solution of potassium hydroxide, an aqueous solution of ammonia, and an alkaline ionized water. 
     
     
         7 . The etching method according to  claim 5 , wherein the at least one acid is citric acid, and a concentration of citrate ions in the etching liquid is equal to or more than 0.2 mol/L. 
     
     
         8 . The etching method according to  claim 5 , wherein a concentration of the hydrogen peroxide is in a range of 0.7% to 10% by weight. 
     
     
         9 . A method of manufacturing a solder bump, comprising:
 applying a resist onto a copper seed layer;   creating an opening in the resist;   forming a copper bump layer, a cobalt layer, and a solder layer in this order in the opening by electroplating;   removing the resist; and   bringing an exposed portion of the copper seed layer into contact with an etching liquid to thereby etch the exposed portion of the copper seed layer,   the etching liquid including,
 (i) at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid; and 
 (ii) hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.