Photo-patternable dielectric materials and formulations and methods of use

Abstract

Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.

What is claimed is: 
     
         1 . A structure, comprising:
 a cross-linked layer of a silsesquioxane polymer or a silsesquioxane polymer on a substrate;   a trench in said cross-linked layer;   an electrically conductive material filling said trench and contacting said substrate in a bottom of said trench; and   a silsesquioxane polymer, wherein said silsesquioxane polymer includes at least one monomer of the structure:   
       
         
           
           
               
               
           
         
         where wherein R 3  is selected from the group consisting of linear alkyl, branched alkyl and cycloalkyl moieties. 
       
     
     
         2 . The structure of  claim 1 , wherein said additional silsesquioxane polymer comprises three or four monomers of the structural formulas (1), (2), (3), (4): 
       
         
           
           
               
               
           
         
         wherein two of said three or four monomers are structures (1) and (2); 
         wherein R 1  is selected from the group consisting of linear alkyl, branched alkyl, cycloalkyl, aromatic, arene and ester moieties; 
         wherein R 2  is selected from the group consisting of vinyl, substituted-vinyl, acetylenic, substituted acetylenic and nitrile moieties; 
         wherein R 3  is selected from the group consisting of linear alkyl, branched alkyl and cycloalkyl moieties; 
         wherein R 4  is selected from the group consisting of linear alkoxy, branched alkoxy, cycloalkoxy, acetoxys, hydroxyl, silyloxy and silanol moieties; and 
         wherein m, n, o, and p represent the mole percent (mol %) of repeating units with m+n+o+p equal to or greater than about 40 mol % and wherein when only three monomers are present either o or p is zero. 
       
     
     
         3 . The structure of  claim 1 , wherein said silsesquioxane polymer comprises three or four monomers of the structural formulas (1), (2), (3), (4): 
       
         
           
           
               
               
           
         
         wherein two of said three or four monomers are structures (1) and (2); 
         wherein R 1  is selected from the group consisting of linear alkyl, branched alkyl, cycloalkyl, aromatic, arene and ester moieties; 
         wherein R 2  is selected from the group consisting of vinyl, substituted-vinyl, acetylenic, substituted acetylenic and nitrile moieties; 
         wherein R 3  is selected from the group consisting of linear alkyl, branched alkyl and cycloalkyl moieties; 
         wherein R 4  is selected from the group consisting of linear alkoxy, branched alkoxy, cycloalkoxy, acetoxys, hydroxyl, silyloxy and silanol moieties; and 
         wherein m, n, o, and p represent the mole percent (mol %) of repeating units with m+n+o+p equal to or greater than about 40 mol % and wherein when only three monomers are present either o or p is zero. 
       
     
     
         4 . The structure of  claim 1 , wherein said silsesquioxane polymer comprises four monomers of the structural formulas (1), (2), (3) and (4): 
       
         
           
           
               
               
           
         
         wherein two of said three or four monomers are structures (1) and (2); 
         wherein R 1  is selected from the group consisting of linear alkyl, branched alkyl, cycloalkyl, aromatic, arene and ester moieties; 
         wherein R 2  is selected from the group consisting of vinyl, substituted-vinyl, acetylenic, substituted acetylenic and nitrile moieties; 
         wherein R 3  is selected from the group consisting of linear alkyl, branched alkyl and cycloalkyl moieties; 
         wherein R 4  is selected from the group consisting of linear alkoxy, branched alkoxy, cycloalkoxy, acetoxys, hydroxyl, silyloxy and silanol moieties; and 
         wherein m, n, o, and p represent the mole percent (mol %) of repeating units with m+n+o+p equal to or greater than about 40 mol % and wherein when only three monomers are present either o or p is zero. 
       
     
     
         5 . The structure of  claim 1 , wherein said silsesquioxane polymer consists essentially of monomers of structural formulas (1), (2) and (3), R 1  is a methyl moiety and m is between about 70 mol % and about 80 mol %, R 2  is a vinyl moiety and n is between about 3 mol % and about 13 mol %, and R 3  is an ethyl moiety and o is between about 0.5 mol % and about 6 mol %. 
     
     
         6 . The structure of  claim 1 , wherein said silsesquioxane polymer consists essentially of monomers of structural formulas (1), (2) and (4), R 1  is a methyl moiety and m is between about 70 mol % and about 80 mol %, R 2  is a vinyl moiety and n is between about 3 mol % and about 13 mol %, and R 4  is a hydroxyl moiety and p is between about 2 mol % and about 10 mol %. 
     
     
         7 . The structure of  claim 1 , wherein said silsesquioxane polymer consists essentially of monomers of structural formulas (1), (2), (3) and (4), R 1  is a methyl moiety and m is between about 70 mol % and about 80 mol %, R 2  is a vinyl moiety and n is between about 3 mol % and about 13 mol %, R 3  is an ethylene moiety and o is between about 0.5 mol % and about 6 mol %, and R 4  is a hydroxyl moiety and p is between about 2 mol % and about 10 mol %. 
     
     
         8 . The structure of  claim 1 , wherein said cross-linked layer has a dielectric constant of about 3.0 or less. 
     
     
         9 . The structure of  claim 1 , further including:
 an additional cross-linked layer of an additional silsesquioxane on said cross-linked layer;   an additional trench in said additional cross-linked layer, a top of said trench open to a bottom of said additional trench; and   said electrically conductive material additionally filling said additional trench.   
     
     
         10 . The structure of  claim 9 , wherein said additional silsesquioxane polymer comprises three or four monomers of the structural formulas (1), (2), (3), (4): 
       
         
           
           
               
               
           
         
         wherein two of said three or four monomers are structures (1) and (2); 
         wherein R 1  is selected from the group consisting of linear alkyl, branched alkyl, cycloalkyl, aromatic, arene and ester moieties; 
         wherein R 2  is selected from the group consisting of vinyl, substituted-vinyl, acetylenic, substituted acetylenic and nitrile moieties; 
         wherein R 3  is selected from the group consisting of linear alkyl, branched alkyl and cycloalkyl moieties; 
         wherein R 4  is selected from the group consisting of linear alkoxy, branched alkoxy, cycloalkoxy, acetoxys, hydroxyl, silyloxy and silanol moieties; and 
         wherein m, n, o, and p represent the mole percent (mol %) of repeating units with m+n+o+p equal to or greater than about 40 mol % and wherein when only three monomers are present either o or p is zero. 
       
     
     
         11 . The structure of  claim 9 , wherein said additional silsesquioxane polymer comprises four monomers of the structural formulas (1), (2), (3), (4): 
       
         
           
           
               
               
           
         
         wherein two of said three or four monomers are structures (1) and (2); 
         wherein R 1  is selected from the group consisting of linear alkyl, branched alkyl, cycloalkyl, aromatic, arene and ester moieties; 
         wherein R 2  is selected from the group consisting of vinyl, substituted-vinyl, acetylenic, substituted acetylenic and nitrile moieties; 
         wherein R 3  is selected from the group consisting of linear alkyl, branched alkyl and cycloalkyl moieties; 
         wherein R 4  is selected from the group consisting of linear alkoxy, branched alkoxy, cycloalkoxy, acetoxys, hydroxyl, silyloxy and silanol moieties; and 
         wherein m, n, o, and p represent the mole percent (mol %) of repeating units with m+n+o+p equal to or greater than about 40 mol % and wherein when only three monomers are present either o or p is zero. 
       
     
     
         12 . A structure, comprising:
 a cross-linked layer of a silsesquioxane polymer or a silsesquioxane polymer on a substrate;   a trench in said cross-linked layer;   an electrically conductive material filling said trench and contacting said substrate in a bottom of said trench; and   wherein said silsesquioxane polymer comprises three or four monomers of the structural formulas (1), (2), (3), (4):   
       
         
           
           
               
               
           
         
         wherein two of said three or four monomers are structures (1) and (2); 
         wherein R 1  is selected from the group consisting of linear alkyl, branched alkyl, cycloalkyl, aromatic, arene and ester moieties; 
         wherein R 2  is selected from the group consisting of vinyl, substituted-vinyl, acetylenic, substituted acetylenic and nitrile moieties; 
         wherein R 3  is selected from the group consisting of linear alkyl, branched alkyl and cycloalkyl moieties; 
         wherein R 4  is selected from the group consisting of linear alkoxy, branched alkoxy, cycloalkoxy, acetoxys, hydroxyl, silyloxy and silanol moieties; and 
         wherein m, n, o, and p represent the mole percent (mol %) of repeating units with m+n+o+p equal to or greater than about 40 mol % and wherein when only three monomers are present either o or p is zero. 
       
     
     
         13 . The structure of  claim 12 , further including:
 an additional cross-linked layer of an additional silsesquioxane on said cross-linked layer;   an additional trench in said additional cross-linked layer, a top of said trench open to a bottom of said additional trench; and   said electrically conductive material additionally filling said additional trench.   
     
     
         14 . The structure of  claim 13 , wherein said additional silsesquioxane polymer comprises three or four monomers of the structural formulas (1), (2), (3), (4): 
       
         
           
           
               
               
           
         
         wherein two of said three or four monomers are structures (1) and (2); 
         wherein R 1  is selected from the group consisting of linear alkyl, branched alkyl, cycloalkyl, aromatic, arene and ester moieties; 
         wherein R 2  is selected from the group consisting of vinyl, substituted-vinyl, acetylenic, substituted acetylenic and nitrile moieties; 
         wherein R 3  is selected from the group consisting of linear alkyl, branched alkyl and cycloalkyl moieties; 
         wherein R 4  is selected from the group consisting of linear alkoxy, branched alkoxy, cycloalkoxy, acetoxys, hydroxyl, silyloxy and silanol moieties; and 
         wherein m, n, o, and p represent the mole percent (mol %) of repeating units with m+n+o+p equal to or greater than about 40 mol % and wherein when only three monomers are present either o or p is zero. 
       
     
     
         15 . The structure of  claim 12 , wherein said cross-linked layer has a dielectric constant of about 3.0 or less. 
     
     
         16 . The structure of  claim 12 , wherein said silsesquioxane polymer consists essentially of monomers of structural formulas (1), (2) and (3), R 1  is a methyl moiety and m is between about 70 mol % and about 80 mol %, R 2  is a vinyl moiety and n is between about 3 mol % and about 13 mol %, and R 3  is an ethyl moiety and o is between about 0.5 mol % and about 6 mol %. 
     
     
         17 . The structure of  claim 12 , wherein said silsesquioxane polymer consists essentially of monomers of structural formulas (1), (2) and (4), R 1  is a methyl moiety and m is between about 70 mol % and about 80 mol %, R 2  is a vinyl moiety and n is between about 3 mol % and about 13 mol %, and R 4  is a hydroxyl moiety and p is between about 2 mol % and about 10 mol %. 
     
     
         18 . The structure of  claim 12 , wherein said silsesquioxane polymer consists essentially of monomers of structural formulas (1), (2), (3) and (4), R 1  is a methyl moiety and m is between about 70 mol % and about 80 mol %, R 2  is a vinyl moiety and n is between about 3 mol % and about 13 mol %, R 3  is an ethylene moiety and o is between about 0.5 mol % and about 6 mol %, and R 4  is a hydroxyl moiety and p is between about 2 mol % and about 10 mol %. 
     
     
         19 . The structure of  claim 12 , wherein said cross-linked layer further includes:
 an additive silsesquioxane polymer of structure (5):   
       
         
           
           
               
               
           
         
         wherein R 5  is selected from the group consisting of alkyl, cycloalkyl and aryl moieties; and 
         wherein s is an integer between about 10 and about 1000. 
       
     
     
         20 . The structure of  claim 12 , wherein said silsesquioxane polymer comprises four monomers of the structural formulas (1), (2), (3), (4).