Semiconductor light-emitting device and method for manufacturing the same

Abstract

The disclosed invention relates to a semiconductor light-emitting element comprising: a plurality of semiconductor layers which are provided with a growth substrate eliminating surface on the side where a first semiconductor layer is located; a support substrate which is provided with a first electrical pathway and a second electrical pathway; a joining layer which joins a first surface side of the support substrate with a second semiconductor layer side of the plurality of semiconductor layers, and is electrically linked with the first electrical pathway; a joining layer eliminating surface which is formed on the first surface, and in which the second electrical pathway is exposed, and which is open towards the plurality of semiconductor layers; and an electrical link for electrically linking the plurality of semiconductor layers with the second electrical pathway exposed in the joining layer eliminating surface.

1 . A semiconductor light emitting device, comprising:
 a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity and a growth substrate-removed surface formed on the side thereof, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination;   a supporting substrate having a first surface and a second surface opposite to the first surface, wherein a first electrical pass via which either electrons or holes are transferred to the plurality of semiconductor layers, and a second electrical pass via which either electrons or holes whichever have not been transferred via the first electrical pass are transferred to the plurality of semiconductor layers continue from the second surface to the first surface;   a bonded layer, which bonds the second semiconductor layer side of the plurality of semiconductor layers to the first surface side of the supporting substrate and is electrically connected with the first electrical pass;   a bonded layer-removed surface formed on the first surface, exposing the second electrical pass and being open towards the plurality of semiconductor layer; and   an electrical connection for electrically connecting the plurality of semiconductor layers with the second electrical pass exposed on the bonded layer-removed surface such that either electrons or holes whichever have not been transferred via the first electrical pass are transferred to the plurality of semiconductor layers.   
     
     
         2 . The semiconductor light emitting device as claimed in  claim 1 , wherein the first semiconductor layer, the active layer and the second semiconductor layer are Group III-nitride semiconductor light emitting devices. 
     
     
         3 . The semiconductor light emitting device as claimed in  claim 1 , wherein the first electrical pass is electrically connected to the first semiconductor layer via the bonded layer, and the second electrical pass is electrically connected to the second semiconductor layer via the electrical connection. 
     
     
         4 . The semiconductor light emitting device as claimed in  claim 3 , further comprising:
 a first conductive layer which is exposed upon the removal of the plurality of semiconductor layers for connection with the electrical connection, and is electrically connected to the second semiconductor layer.   
     
     
         5 . The semiconductor light emitting device as claimed in  claim 1 , wherein the first electrical pass is electrically connected to the second semiconductor layer via the bonded layer, and the second electrical pass is electrically connected to the first semiconductor layer via the electrical connection. 
     
     
         6 . The semiconductor light emitting device as claimed in  claim 5 , further comprising:
 a second conductive layer which is exposed upon the removal of the plurality of semiconductor layers for connection with the electrical connection, and is electrically connected to the first semiconductor layer.   
     
     
         7 . The semiconductor light emitting device as claimed in  claim 5 , wherein the electrical connection is extended to the growth substrate-removed surface. 
     
     
         8 . The semiconductor light emitting device as claimed in  claim 1 , wherein the plurality of semiconductor layers has a mesa surface formed upon the sequential removal of the second semiconductor layer and the active layer. 
     
     
         9 . (canceled) 
     
     
         10 . The semiconductor light emitting device as claimed in  claim 1 , wherein the plurality of semiconductor layers are all covered by the bonded layer, when projected in a direction from the plurality of semiconductor layers to the supporting substrate. 
     
     
         11 . The semiconductor light emitting device as claimed in  claim 1 , further comprising:
 an electric contact which is exposed on the opposite side of the supporting substrate with respect to the bonded layer, and interworks with the electrical connection for use in probing of the semiconductor light emitting device.   
     
     
         12 . A method for manufacturing a semiconductor light emitting device, comprising the steps of:
 preparing a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity and a growth substrate-removed surface being formed on the side thereof, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination;   preparing a supporting substrate having a first surface and a second surface opposite to the first surface, wherein a first electrical pass via which either electrons or holes are transferred to the plurality of semiconductor layers, and a second electrical pass via which either electrons or holes whichever have not been transferred via the first electrical pass are transferred to the plurality of semiconductor layers are provided;   bonding the plurality of semiconductor layers side on the opposite side of the growth substrate with the first surface side of the supporting substrate, such that a bonded layer is formed on the bonded region and the first electrical pass is electrically connected to the plurality of semiconductor layers via the bonded layer;   removing the substrate;   removing the bonded layer so as to expose the second electrical pass; and   electrically connecting the second electrical pass with the plurality of semiconductor layer such that either electrons or holes whichever have not been transferred via the first electrical pass are transferred to the plurality of semiconductor layers.   
     
     
         13 . The method for manufacturing a semiconductor light emitting device as claimed in  claim 12 , wherein the bonded layer removing step includes removing the plurality of semiconductor layers. 
     
     
         14 . The method for manufacturing a semiconductor light emitting device as claimed in  claim 12 , wherein the step of removing the bonded layer includes isolating the plurality of semiconductor layers for producing individual chips, and removing the bonded layer to expose the second electrical pass. 
     
     
         15 . The method for manufacturing a semiconductor light emitting device as claimed in  claim 12 , wherein the plurality of semiconductor layers has a conductive layer electrically connected to one of the first and second semiconductor layers, and the method further comprises, prior to the electrical connecting step, the step of removing the plurality of semiconductor layers to expose the conductive layer. 
     
     
         16 . The method for manufacturing a semiconductor light emitting device as claimed in  claim 15 , wherein the conductive layer is electrically connected to the second semiconductor layer. 
     
     
         17 . The method for manufacturing a semiconductor light emitting device as claimed in  claim 15 , wherein the conductive layer is electrically connected to the first semiconductor layer. 
     
     
         18 . The method for manufacturing a semiconductor light emitting device as claimed in  claim 12 , wherein in the electrical connecting step, the second electrical pass continues to the plurality of semiconductor layers having the growth substrate been removed therefrom. 
     
     
         19 . The method for manufacturing a semiconductor light emitting device as claimed in  claim 12 , wherein prior to the bonding step, a part of the plurality of semiconductor layers is removed. 
     
     
         20 . (canceled) 
     
     
         21 . The method for manufacturing a semiconductor light emitting device as claimed in  claim 12 , wherein in the bonding step, both the first electrical pass and the second electrical pass are bonded to the bonded layer. 
     
     
         22 . The method for manufacturing a semiconductor light emitting device as claimed in  claim 12 , wherein in the bonding step, the bonded layer is formed all over the first surface of the supporting substrate.