Upper electrode and plasma processing apparatus

Abstract

In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. The electrode part is formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the gas distribution hole is formed.

1 . An upper electrode comprising:
 a plate-like member provided with a flow path that distributes a processing gas used for a plasma processing; and   an electrode part formed in a film shape by thermally spraying silicon onto a surface the plate-like member where an outlet of the flow path is formed.   
     
     
         2 . The upper electrode of  claim 1 , wherein a resistivity of a peripheral portion of the electrode part and a resistivity of a central portion of the electrode part are set to different values by adjusting concentrations of boron added to the silicon in the peripheral portion of the electrode part and in the central portion of the electrode part. 
     
     
         3 . The upper electrode of  claim 1 , wherein a resistivity of a peripheral portion of the electrode part and a resistivity of a central portion of the electrode part are set to different values by adjusting film thicknesses of the silicon in the peripheral portion of the electrode part and in the central portion of the electrode part. 
     
     
         4 . The upper electrode of  claim 2 , wherein the resistivity of the peripheral portion of the electrode part and the resistivity of the central portion of the electrode part are set to different values within a range of 0.01 mΩcm to 100 Ωcm. 
     
     
         5 . The upper electrode of  claim 1 , further comprising:
 a ceramic film part formed in a film shape by thermally spraying ceramic between the plate-like member and the electrode part.   
     
     
         6 . The upper electrode of  claim 5 , wherein the ceramic film part is formed at a position corresponding to the central portion of the electrode part. 
     
     
         7 . The upper electrode of  claim 5 , wherein the ceramic film part is formed at a position corresponding to the peripheral portion of the electrode part. 
     
     
         8 . The upper electrode of  claim 5 , wherein a film thickness of the ceramic film part is set to be different between the position corresponding to the peripheral portion of the electrode part and the position corresponding to the central portion of the electrode part. 
     
     
         9 . A plasma processing apparatus comprising:
 a processing container configured to define a plasma processing space;   a lower electrode provided in the processing container and configured to place a substrate to be processed thereon; and   an upper electrode disposed to face the lower electrode across the plasma processing space,   wherein the upper electrode includes:   a plate-like member provided with a flow path that distributes a processing gas used for a plasma processing; and   an electrode part formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the flow path is formed.