US2015171254A1PendingUtilityA1

GROUP-V DOPING OF GaAs-BASED LAYERS TO IMPROVE RADIATION TOLERANCE OF SOLAR CELLS

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Assignee: BOEING COPriority: Sep 26, 2012Filed: Feb 20, 2015Published: Jun 18, 2015
Est. expirySep 26, 2032(~6.1 yrs left)· nominal 20-yr term from priority
Inventors:Joseph C. BoisvertChristopher M. Fetzer
Y02E10/544H10F 77/80H10F 10/1425H10F 10/142H10F 77/12485H10F 77/1243H10F 10/144H01L 31/0687H01L 31/0693Y02P70/50
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Claims

Abstract

Methods for improving the performance and lifetime of irradiated photovoltaic cells are disclosed, whereby Group-V elements, and preferably nitrogen, are used to dope semiconductor GaAs-based subcell alloys.

Claims

exact text as granted — not AI-modified
We claim: 
     
         1 . A photovoltaic cell comprising:
 at least one GaAs-based subcell layer comprising As vacancies; and   a group-V element-containing material,   
       wherein the group V element-containing material is (a) provided as a layer located proximate the GaAs-based subcell layer or (b) incorporated into the GaAs-based subcell layer. 
     
     
         2 . The photovoltaic cell of  claim 1 , wherein the group V element-containing material is provided as a layer located proximate the GaAs-based subcell layer. 
     
     
         3 . The photovoltaic cell of  claim 2 , wherein the at least one GaAs-based subcell layer comprises GaAs, GaInAs, GaAsSb, GaAsBi, GaInAsP, AlGaAs, GaInAsSb, AlGaInAs, AlInAs, AlGaAsSb, AlGaInAsSb, or AlGaInAsP. 
     
     
         4 . The photovoltaic cell of  claim 2 , wherein the group-V element-containing material comprises nitrogen. 
     
     
         5 . The photovoltaic cell of  claim 2 , wherein the photovoltaic cell comprises a multi-junction cell. 
     
     
         6 . The photovoltaic cell of  claim 2 , wherein the photovoltaic cell comprises a single junction cell. 
     
     
         7 . The photovoltaic cell of  claim 2 , wherein the photovoltaic cell is incorporated into a vehicle. 
     
     
         8 . The photovoltaic cell of  claim 2 , wherein the photovoltaic cell is incorporated into a spacecraft. 
     
     
         9 . The photovoltaic cell of  claim 2 , wherein the photovoltaic cell is incorporated into a laser. 
     
     
         10 . The photovoltaic cell of  claim 1 , wherein the group V element-containing material is incorporated into the GaAs-based subcell layer. 
     
     
         11 . The photovoltaic cell of  claim 10 , wherein the group V element-containing material is disposed in the As vacancies. 
     
     
         12 . The photovoltaic cell of  claim 10 , wherein the at least one GaAs-based subcell layer comprises GaAs, GaInAs, GaAsSb, GaAsBi, GaInAsP, AlGaAs, GaInAsSb, AlGaInAs, AlInAs, AlGaAsSb, AlGaInAsSb, or AlGaInAsP. 
     
     
         13 . The photovoltaic cell of  claim 10 , wherein the group-V element-containing material comprises nitrogen. 
     
     
         14 . The photovoltaic cell of  claim 13 , wherein the concentration of nitrogen in the GaAs-based subcell layer is from about 1×10 13 /cm 3  to about 1×10 18 /cm 3 . 
     
     
         15 . The photovoltaic cell of  claim 10 , wherein the photovoltaic cell comprises a multi-junction cell. 
     
     
         16 . The photovoltaic cell of  claim 10 , wherein the photovoltaic cell comprises a single junction cell. 
     
     
         17 . The photovoltaic cell of  claim 10 , wherein the photovoltaic cell is incorporated into a vehicle. 
     
     
         18 . The photovoltaic cell of  claim 10 , wherein the photovoltaic cell is incorporated into a spacecraft. 
     
     
         19 . The photovoltaic cell of  claim 10 , wherein the photovoltaic cell is incorporated into a laser.

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