Bonded strained semiconductor with a desired surface orientation and conductance direction

Abstract

According to various method embodiments, a semiconductor layer is oriented to a substrate. The semiconductor layer has a surface orientation and is oriented to the substrate to provide a desired direction of conductance for the surface orientation. The oriented semiconductor layer is bonded to the substrate to strain the semiconductor layer. Various embodiments provide a tensile strain, and various embodiments provide a compressive strain. Other aspects and embodiments are provided herein.

What is claimed is: 
     
         1 . A structure, comprising:
 a substrate;   a crystalline semiconductor layer bonded to the substrate, the semiconductor layer having a surface orientation and a desired channel conductance direction for the surface orientation, the crystalline semiconductor layer having a local strained region; and   a gate oxide over the local strained region, a gate over the gate oxide, and first and second source/drain regions to provide a channel region with the desired channel conductance direction within in the local strained region.   
     
     
         2 . The structure of  claim 1 , wherein the local strained region includes a uniaxial tensile strain. 
     
     
         3 . The structure of  claim 1 , wherein the local strained region includes a uniaxial compressive strain. 
     
     
         4 . The structure of  claim 1 , wherein the crystalline semiconductor layer includes a silicon layer with a (100) crystalline orientation and the desired channel conductance direction is a <110> direction with respect to the crystalline orientation. 
     
     
         5 . The structure of  claim 1 , wherein the crystalline semiconductor layer includes a silicon layer with a (110) crystalline orientation and the desired channel conductance direction is a <100> direction with respect to the crystalline orientation. 
     
     
         6 . The structure of  claim 1 , wherein the crystalline semiconductor layer includes a silicon layer with a (111) crystalline orientation and the desired channel conductance direction is a <110> direction with respect to the crystalline orientation. 
     
     
         7 . The structure of  claim 1 , wherein the crystalline semiconductor layer includes a silicon layer with a (100) crystalline orientation and the desired channel conductance direction is a <100> direction with respect to the crystalline orientation. 
     
     
         8 . The structure of  claim 1 , wherein the local strained region has a strain greater than 0.75%. 
     
     
         9 . The structure of  claim 1 , wherein the local strained region has a strain within a range between approximately 0.75% and approximately 1.5%. 
     
     
         10 . The structure of  claim 1 , wherein the local strained region has a strain within a range between approximately 1.0% and approximately 1.2%. 
     
     
         11 . The structure of  claim 1 , wherein the crystalline semiconductor layer has a thickness of approximately 1000 Å or less. 
     
     
         12 . The structure of  claim 1 , wherein the crystalline semiconductor layer has a thickness of approximately 300 Å to 1000 Å. 
     
     
         13 . A structure, comprising:
 a substrate;   a crystalline silicon layer bonded to the substrate, the semiconductor layer having a thickness of approximately 1000 Å or less and having a surface orientation and a desired channel conductance direction for the surface orientation, the crystalline semiconductor layer having a local strained region that includes a uniaxial strain; and   a gate oxide over the local strained region, a gate over the gate oxide, and first and second source/drain regions to provide a channel region with the desired channel conductance direction within in the local strained region.   
     
     
         14 . The structure of  claim 13 , wherein the uniaxial strain is compressive. 
     
     
         15 . The structure of  claim 13 , wherein the uniaxial strain is tensile. 
     
     
         16 . The structure of  claim 13 , wherein the local strained region has a strain within a range between approximately 0.75% and approximately 1.5%. 
     
     
         17 . The structure of  claim 13 , wherein the local strain region includes a first local strain region that includes a tensile strain, the structure further including a second local strain region that includes a compressive strain. 
     
     
         18 . A structure, comprising:
 a substrate;   a first crystalline silicon layer bonded to the substrate, the first layer having a first surface orientation and a first desired channel conductance direction for the first surface orientation, the first layer having a first local strained region;   a first device formed using the first layer, including a first gate oxide over the first local strained region, a first gate over the first gate oxide, and first and second source/drain regions to provide a first channel region with the first desired channel conductance direction within in the first local strained region;   a second crystalline silicon layer bonded to the substrate, the second layer having a second surface orientation and a second desired channel conductance direction for the second surface orientation, the second layer having a second local strained region; and   a second device formed using the second layer, including a second gate oxide over the second local strained region, a second gate over the second gate oxide, and third and fourth source/drain regions to provide a second channel region with the second desired channel conductance direction within in the second local strained region.   
     
     
         19 . The structure of  claim 18 , wherein the first layer is a (100) silicon layer, the first desired channel conductance is in the <110> direction with respect to the (100) silicon layer, the second layer is (110) silicon layer, and the second desired channel conductance is in the <100> direction with respect to the (110) silicon layer. 
     
     
         20 . The structure of  claim 18 , wherein the first local strained region includes a tensile strain and the second local strained region includes a compressive strain.