Integrated circuit and method for fabricating the same having a replacement gate structure

Abstract

Integrated circuits and methods of fabricating integrated circuits are provided herein. In an embodiment, an integrated circuit includes a first replacement gate structure, wherein the first replacement gate structure includes a layer of a high-k dielectric material and a layer of a first replacement gate fill material, and a second replacement gate structure, wherein the second replacement gate structure includes a layer of a transformed dielectric material and a layer of the replacement gate fill material.

What is claimed is: 
     
         1 . An integrated circuit, comprising:
 a first replacement gate structure, wherein the first replacement gate structure comprises:
 a layer of a high-k dielectric material; and 
 a layer of a first replacement gate fill material; and 
   a second replacement gate structure, wherein the second replacement gate structure comprises:
 a layer of a transformed dielectric material; and 
 a layer of the replacement gate fill material. 
   
     
     
         2 . The integrated circuit of  claim 1 , wherein the replacement gate fill material is a tungsten nitride. 
     
     
         3 . The integrated circuit of  claim 1 , wherein the first replacement gate structure further comprises a layer of a second replacement gate fill material formed over the layer of the first replacement gate fill material, and wherein the second replacement gate structure further comprises a layer of the second replacement gate fill material formed over the layer of the first replacement gate fill material. 
     
     
         4 . The integrated circuit of  claim 3 , wherein the second replacement gate fill material is tungsten. 
     
     
         5 . The integrated circuit of  claim 1 , wherein the high-k dielectric material is a hafnium oxide. 
     
     
         6 . The integrated circuit of  claim 1 , wherein the transformed dielectric material is a hafnium lanthanum oxide. 
     
     
         7 . The integrated circuit of  claim 1 , wherein the transformed dielectric material is a hafnium aluminum oxide. 
     
     
         8 . An integrated circuit, comprising:
 a first replacement gate structure, wherein the first replacement gate structure comprises:
 a layer of a high-k dielectric material; 
 a layer of a conductive barrier material; and 
 a layer of a first replacement gate fill material; and 
   a second replacement gate structure, wherein the second replacement gate structure comprises:
 a layer of a transformed dielectric material; and 
 a layer of the first replacement gate fill material. 
   
     
     
         9 . The integrated circuit of  claim 8 , wherein the conductive barrier material is a titanium nitride. 
     
     
         10 . The integrated circuit of  claim 8 , further comprising a third replacement gate structure, wherein the third replacement gate structure comprises a layer of the high-k dielectric material and a layer of the first replacement gate fill material. 
     
     
         11 . The integrated circuit of  claim 10 , wherein the first replacement gate fill material is a tantalum carbide. 
     
     
         12 . The integrated circuit of  claim 8 , wherein the first replacement gate fill material is tungsten nitride. 
     
     
         13 . The integrated circuit of  claim 8 , wherein the first replacement gate structure further comprises a layer of a second replacement gate fill material formed over the layer of the first replacement gate fill material, and wherein the second replacement gate structure further comprises a layer of the second replacement gate fill material formed over the layer of the first replacement gate fill material. 
     
     
         14 . The integrated circuit of  claim 8 , wherein the second replacement gate fill material is tungsten. 
     
     
         15 . The integrated circuit of  claim 8 , wherein the high-k dielectric material is a hafnium oxide. 
     
     
         16 . The integrated circuit of  claim 8 , wherein the transformed dielectric material is a hafnium lanthanum oxide. 
     
     
         17 . The integrated circuit of  claim 8 , wherein the transformed dielectric material is a hafnium aluminum oxide. 
     
     
         18 . An integrated circuit, comprising:
 a first replacement gate structure, wherein the first replacement gate structure comprises:
 a layer of a high-k dielectric material; and 
 a layer of a first replacement gate fill material; 
   a second replacement gate structure, wherein the second replacement gate structure comprises:
 a layer of the high-k dielectric material; 
 a layer of a conductive barrier material; and 
 a layer of a first replacement gate fill material, wherein a layer thickness of the layer of the first replacement gate fill material of the second replacement gate structure is less than a layer thickness of the layer of the first replacement gate fill material of the first replacement gate structure; and 
   a third replacement gate structure, wherein the third replacement gate structure comprises:
 a layer of a transformed dielectric material; and 
 a layer of the first replacement gate fill material. 
   
     
     
         19 . The integrated circuit of  claim 18 , wherein the transformed dielectric material is a hafnium lanthanum oxide. 
     
     
         20 . The integrated circuit of  claim 18 , wherein the transformed dielectric material is a hafnium aluminum oxide.