Cleaning composition for removing organic material and method of forming semiconductor device using the composition

Abstract

Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %.hydroxide based on a total weight of the cleaning composition and deionized water.

What is claimed is: 
     
         1 . A cleaning composition for removing an organic residue on an organic layer, the cleaning composition comprising:
 0.01 to 5 wt. % hydroxide based on a total weight of the cleaning composition; and   deionized water.   
     
     
         2 . The cleaning composition as claimed in  claim 1 , wherein the organic residue is produced in or after a process of polishing the organic layer. 
     
     
         3 . The cleaning composition as claimed in  claim 1 , wherein the cleaning composition has a pH of 5 or higher. 
     
     
         4 . The cleaning composition as claimed in  claim 1 , wherein the hydroxide is at least one of tetramethylammonium hydroxide (TMAH), ammonium hydroxide (NH 4 OH), lithium hydroxide (LiOH), sodium hydroxide (NaOH), potassium hydroxide (KOH), rubidium hydroxide (RbOH), or cesium hydroxide (CsOH). 
     
     
         5 . The cleaning composition as claimed in  claim 1 , further comprising:
 0.1 to 10 wt. % of an organic solvent based on a total weight of the cleaning composition.   
     
     
         6 . The cleaning composition as claimed in  claim 5 , wherein the organic solvent is at least one selected from the group of hydrocarbon-containing, halogenated hydrocarbon-containing, ester-containing, ether-containing, acetate-containing, glycol-containing, alcohol-containing, ketone-containing, amide-containing, aldehyde-containing, and amine-containing organic solvents. 
     
     
         7 . The cleaning composition as claimed in  claim 5 , wherein the organic solvent is 3-methylbutanal. 
     
     
         8 . The cleaning composition as claimed in  claim 1 , further comprising:
 0.1 to 10 wt. % of an organic acid based on a total weight of the cleaning composition.   
     
     
         9 . The cleaning composition as claimed in  claim 8 , wherein the organic acid is at least one selected from the group of citric acid, lactic acid, acetic acid, formic acid, oxalic acid, uric acid, fumaric acid, tartaric acid, glutamic acid, malic acid, phthalic acid, levulinic acid, stearic acid, benzoic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, and sebacid acid. 
     
     
         10 . The cleaning composition as claimed in  claim 1 , further comprising:
 0.1 to 10 wt. % of an amino acid based on a total weight of the cleaning composition.   
     
     
         11 . The cleaning composition as claimed in  claim 10 , wherein the amino acid is at least one selected from the group of alanine, arginine, asparagine, aspartic acid, cysteine, glutamic acid, glutamine, glycine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, and valine. 
     
     
         12 . A method of fabricating a semiconductor device, the method comprising:
 forming a first structure including a substrate and a first recess region formed on the substrate;   forming an organic layer on the first structure to fill the first recess region;   performing a polishing process to remove at least a portion of the organic layer; and   performing a cleaning process using the cleaning composition as claimed in  claim 1 .   
     
     
         13 . The method as claimed in  claim 12 , wherein:
 the polishing process exposes a top surface of the first structure and forms an organic pattern in the first recess region, and the first recess region is a first hole exposing the substrate, and   the method further comprises:   forming a second structure on the first structure after the cleaning process, the second structure being formed to have a second hole exposing a top surface of the organic pattern;   removing the organic pattern that is exposed by the second hole through the second hole;   forming an active pillar to cover at least sidewalls of the first and second holes; and   forming conductive lines in the first and second structures.   
     
     
         14 . The method as claimed in  claim 13 , wherein each of the first and second structures is formed to include a plurality of insulating layers and a plurality of sacrificial layers that are alternatingly stacked on the substrate, and
 the forming of the conductive lines in the first and second structures includes:   selectively removing the sacrificial layers to form gap regions; and   forming the conductive lines in the gap regions.   
     
     
         15 . The method as claimed in  claim 12 , wherein:
 the first structure includes an etch-target layer provided on the substrate, a plurality of first mask patterns provided parallel to each other on the etch-target layer, and a second mask layer conformally covering top and side surfaces of the first mask patterns and defining the first recess region between the first mask patterns,   the polishing process exposes a top surface of the second mask layer and forms an organic pattern in the first recess region, and   the method further comprises anisotropically etching the second mask layer to form a second mask pattern below the organic pattern.   
     
     
         16 . A method for removing an organic residue from a hydrocarbon layer or organic layer, the method comprising:
 providing a cleaning composition including:
 0.01 to 5 wt. % hydroxide based on a total weight of the cleaning composition; and 
 deionized water; and 
   cleaning the hydrocarbon or organic layer using the cleaning composition.   
     
     
         17 . The method as claimed in  claim 16 , wherein the cleaning involves use of an ultrasonic wave. 
     
     
         18 . The method as claimed in  claim 16 , wherein the cleaning involves use of a brush. 
     
     
         19 . The method as claimed in  claim 16 , further comprising:
 after the cleaning, treating the hydrocarbon or organic layer with deionized water; and   drying the hydrocarbon layer or organic layer using argon, nitrogen, or isopropyl alcohol.   
     
     
         20 . The method as claimed in  claim 16 , wherein the organic residue is produced in or after a process of polishing the organic layer.