Functionalized Matrices for Dispersion of Nanostructures

Abstract

Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes are optionally formed from the ligands. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

1 - 59 . (canceled) 
     
     
         60 . A method of synthesizing InP nanostructures, comprising reacting indium acetate and tris(trimethylsilyl)phosphine in a solvent comprising an acid to give said InP nanostructures. 
     
     
         61 . The method of  claim 60 , wherein the acid is a fatty acid. 
     
     
         62 . The method of  claim 61 , wherein said fatty acid is lauric acid, capric acid, myristic acid, palmitic acid, or stearic acid. 
     
     
         63 . The method of  claim 60 , wherein the acid is a phosphonic acid, a dicarboxylic acid, or a polycarboxylic acid. 
     
     
         64 . The method of  claim 63 , wherein the acid is a phosphonic acid selected from the group consisting of hexylphosphonic acid and tetradecylphosphonic acid. 
     
     
         65 . The method of  claim 63 , wherein the acid is a dicarboxylic acid selected from the group consisting of heptanedioic acid and dodecenylsuccinoic acid. 
     
     
         66 . The method of  claim 60 , wherein the solvent is trioctyl phosphine oxide, trioctyl phosphine, benzophenone, hexadecane, or octadecane. 
     
     
         67 . The method according to  claim 60 , wherein the solvent is other than octadecene. 
     
     
         68 . The method of  claim 60 , wherein said nanostructures have an average diameter between 1 and 6 nm. 
     
     
         69 . The method of  claim 68 , wherein said nanostructures have an average diameter of between 1.5 and 5.5 nm. 
     
     
         70 . The method of  claim 68 , wherein said nanostructures have an average diameter of less than 2 nm. 
     
     
         71 . The method of  claim 60 , wherein the emission spectrum of the nanostructures has an emission maximum of between 500 nm and 750 nm. 
     
     
         72 . The method of  claim 60 , wherein the nanostructures have an emission spectrum at full width at half maximum of less than 70 nm. 
     
     
         73 . The method of  claim 60 , further comprising growing a shell on the nanostructures by a method comprising contacting the nanostructures with diethylzinc and hexamethyldisilthiane in a solvent comprising a surfactant. 
     
     
         74 . The method of  claim 73 , wherein the surfactant is a fatty acid selected from the group consisting of lauric acid, capric acid, myristic acid, palmitic acid, and stearic acid. 
     
     
         75 . The method of  claim 73 , wherein the surfactant is a dicarboxylic or polycarboxylic acid. 
     
     
         76 . The method of  claim 73 , wherein the surfactant is a monodicarboxylic acid-terminated polydimethylsiloxane. 
     
     
         77 . InP nanostructures obtained according to the method of  claim 60 . 
     
     
         78 . The InP nanostructures of  claim 77 , further comprising a ZnS, ZnSe, ZnSe x S 1-x , ZnTe, or ZnO shell. 
     
     
         79 . The InP nanostructures comprising a shell obtained according to the method of  claim 73 . 
     
     
         80 . A population of core-shell nanostructures comprising an InP core and a ZnS, ZnSe, ZnSe x S 1-x , ZnTe, or ZnO shell, wherein the nanostructures have an emission spectrum at full width at half maximum of less than 50 nm and a quantum efficiency greater than 50%. 
     
     
         81 . The population of core-shell nanostructures of  claim 80 , wherein the nanostructures have a quantum efficiency greater than 55%. 
     
     
         82 . The population of core-shell nanostructures of  claim 80 , wherein the nanostructures have a quantum efficiency greater than 60%. 
     
     
         83 . The population of core-shell nanostructures of  claim 80 , wherein the nanostructures have an emission spectrum at full width at half maximum of less than 40 nm. 
     
     
         84 . The population of core-shell nanostructures of  claim 80 , wherein the nanostructures have a shell comprising ZnSe x S 1-x . 
     
     
         85 . The population of core-shell nanostructures of  claim 80 , wherein the nanostructures have a shell comprising ZnS. 
     
     
         86 . The population of core-shell nanostructures of  claim 80 , wherein the nanostructures have a shell comprising ZnSe. 
     
     
         87 . The population of core-shell nanostructures of  claim 80 , wherein said nanostructures have an average diameter between 1 and 6 nm. 
     
     
         88 . The population of core-shell nanostructures of  claim 87 , wherein said nanostructures have an average diameter between 1.5 and 5.5 nm. 
     
     
         89 . The population of core-shell nanostructures of  claim 88 , wherein said nanostructures have an average diameter less than 2 nm. 
     
     
         90 . The population of core-shell nanostructures of  claim 80 , wherein the emission spectrum of the nanostructures has an emission maximum of between 500 nm and 750 nm.