Forming Charge Trap Separation in a Flash Memory Semiconductor Device

Abstract

During formation of a charge trap separation in a semiconductor device, a polymer deposition is formed in a reactor using a first chemistry. In a following step, a second chemistry can be used to etch the polymer deposition in the reactor. The same or similar second chemistry can be used in a second etching step to expose a first oxide layer in each of the cells of the semiconductor device and to form a flat upper surface. This additional etch step can also be performed by the reactor, thereby reducing the number of machines required in the formation process.

1 - 13 . (canceled) 
     
     
         14 . An apparatus for forming charge trap separation in a semiconductor device, the semiconductor device having a charge trap layer formed on a substrate, the apparatus comprising:
 a deposition module configured to grow a polymer deposition on the charge trap layer so as to fill cell separation gaps between adjacent cells of the charge trap layer;   a first etching module configured to etch the polymer deposition to expose the charge trap layer such that an upper surface of the polymer deposition is lower than an upper surface of the charge trap layer; and   a second etching module configured to etch the polymer deposition over the cells and within the cell separation gaps together with the charge trap layer so as to expose a bottom portion of the charge trap layer within the cells and form a uniform upper surface among the cells and the cell separation gaps.   
     
     
         15 . The apparatus of  claim 14 , wherein the deposition module is configured to grow the polymer deposition using a grow chemistry, and
 wherein at least one of the first etching module and the second etching module is configured to etch using an etch chemistry that is different from the grow chemistry.   
     
     
         16 . The apparatus of  claim 15 , wherein the first etching module and the second etching module are both configured to etch using the etch chemistry. 
     
     
         17 . The apparatus of  claim 15 , wherein the grow chemistry includes at least one of a hydrocarbon gas and a fluorocarbon gas. 
     
     
         18 . The apparatus of  claim 15 , wherein the etch chemistry includes a mixture of CF4 and O2. 
     
     
         19 . (canceled) 
     
     
         20 . The apparatus of  claim 14 , wherein the first etching module is configured to remove a portion of the polymer deposition from within the cell separation gaps.