Semiconductor sensor reliability operation

Abstract

Embodiments of the present invention provide a semiconductor sensor reliability system and method. Specifically, the present invention provides in-situ positioning of a reliability sensor (hereinafter sensors) within each functional block, as well as at critical locations, of a semiconductor system. The quantity and location of the sensors are optimized to have maximum sensitivity to known process variations. In general, the sensor models a behavior (e.g., aging process) of the location (e.g., functional block) in which it is positioned and comprises a plurality of stages connected as a network and a self-digitizer. Each sensor has a mode selection input for selecting a mode thereof and an operational trigger input for enabling the sensor to model the behavior. The model selection input and operation trigger enable the sensor to have an operational mode in which the plurality of sensors are subject to an aging process, as well as a measurement mode in which an age of the plurality of sensors is outputted. Based on the output, one or more functional blocks are modified by a control sensor component to reduce semiconductor system degredation in real-time.

What is claimed is: 
     
         1 . A semiconductor sensor reliability system, comprising:
 a semiconductor system comprising a plurality of functional blocks;   at least one gradient-detecting sensor, wherein the at least one gradient-detecting sensor is positioned between at least two functional blocks of the plurality of functional blocks, wherein the at least one gradient-detecting sensor is configured to detect a gradient between the at least two functional blocks of the plurality of functional blocks; and   a sensor control component configured to control the at least one gradient-detecting sensor based on an output received from the at least one gradient-detecting sensor.   
     
     
         2 . The semiconductor sensor reliability system of  claim 1 , wherein the at least one gradient-detecting sensor positioned between the at least two functional blocks of the plurality of functional blocks is imbedded at a connection point between the at least two functional blocks. 
     
     
         3 . The semiconductor sensor reliability system of  claim 1 , each of the at least one gradient-detecting sensor having a mode selection input for selecting a mode of the plurality of sensors and an operational trigger input for enabling the plurality of sensors to detect aging. 
     
     
         4 . The semiconductor sensor reliability system of  claim 3 , the mode selection input enabling the at least one gradient-detecting sensor to have:
 an operational mode in which the at least one gradient-detecting sensor is subject to an aging process; and   a measurement mode in which an age of the at least one gradient-detecting sensor is outputted.   
     
     
         5 . The semiconductor sensor reliability system of  claim 1 , each of the at least one gradient-detecting sensor comprising a plurality of sensor stages connected as a network and a self digitizer. 
     
     
         6 . The semiconductor sensor reliability system of  claim 1 , wherein the sensor control component further controls at least one of the following: at least one of the plurality of functional blocks, and the semiconductor system. 
     
     
         7 . The semiconductor sensor reliability system of  claim 1 , wherein a number of sensors in the plurality of gradient-detecting sensors is optimized to have maximum sensitivity to predetermined manufacturing process variation. 
     
     
         8 . The semiconductor sensor reliability system of  claim 1 , wherein a location of each of the plurality of gradient-detecting sensors is optimized to have maximum sensitivity to predetermined manufacturing process variation. 
     
     
         9 . The semiconductor sensor reliability system of  claim 1 , wherein the sensor control component is further configured to control the semiconductor system based on the output. 
     
     
         10 . The semiconductor sensor reliability system of  claim 1 , wherein the sensor control component is further configured to determine a level of degradation between the at least two functional blocks, and translate the level to formulate a sensor operation policy to observe and delay the aging process for the at least two functional blocks. 
     
     
         11 . The semiconductor sensor reliability system of  claim 10 , wherein the sensor operation policy is adjustable in real-time. 
     
     
         12 . A method for semiconductor reliability sensor operation, comprising:
 positioning a plurality of gradient-detecting sensors between at least two functional blocks of a plurality of functional blocks to observe defect-sensitive locations within a semiconductor system; and   engaging an operational model of the plurality of the sensors to cause each gradient-detecting sensor to output a model representing an aging process of the defect-sensitive location in which it is positioned; and   modifying at least one of the following based on the outputted model: at least one of the plurality of sensors, at least one of the plurality of functional blocks, and the semiconductor system.   
     
     
         13 . The method of  claim 12 , wherein the defect-sensitive location comprises at least one of the following: a location within the functional block subject to semiconductor system manufacturing process variation, and a connection point between functional blocks. 
     
     
         14 . The method of  claim 12 , further comprising receiving output from the plurality of gradient-detecting sensors, the output comprising a sensor age of each of the plurality of sensors due to the aging process. 
     
     
         15 . The method of  claim 12 , each sensor comprising a plurality of sensor stages connected as a network and a self digitizer, each of the plurality of stages having multiple inputs and multiple outputs. 
     
     
         16 . The method of  claim 15 , each of the plurality of stages comprising a plurality of devices coupled in a Complimentary Metal-Oxide Semiconductor (CMOS)-like fashion. 
     
     
         17 . The method of  claim 16 , the plurality of devices being selected from a group consisting of: aging-resistant devices and aging-sensitive devices.