Semiconductor device

Abstract

A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

1 . A semiconductor device comprising:
 an oxide semiconductor film having conductivity; and   a first conductive film in contact with the oxide semiconductor film having conductivity,   wherein the first conductive film includes a Cu—X alloy film,   wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti, and   wherein a hydrogen concentration of the oxide semiconductor film having conductivity is higher than or equal to 8×10 19  atoms/cm 3 .   
     
     
         2 . The semiconductor device according to  claim 1 , wherein a resistivity of the oxide semiconductor film having conductivity is higher than or equal to 1×10 −3  Ωcm and lower than 1×10 4  Ωcm. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the first conductive film includes a Cu—Mn alloy film. 
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein the oxide semiconductor film having conductivity includes hydrogen and an oxygen vacancy, and   wherein the hydrogen is located in the oxygen vacancy.   
     
     
         5 . The semiconductor device according to  claim 1 , further comprising a resistor,
 wherein the resistor includes the oxide semiconductor film having conductivity, the first conductive film, and a second conductive film, and   wherein the second conductive film is in contact with the oxide semiconductor film having conductivity.   
     
     
         6 . The semiconductor device according to  claim 1 , further comprising a capacitor,
 wherein the capacitor includes the oxide semiconductor film having conductivity, the first conductive film, an insulating film, and a second conductive film,   wherein the insulating film is over the oxide semiconductor film having conductivity and the first conductive film, and   wherein the second conductive film is over the insulating film and overlaps with the oxide semiconductor film having conductivity.   
     
     
         7 . The semiconductor device according to  claim 6 , wherein the insulating film is a nitride insulating film. 
     
     
         8 . A semiconductor device comprising:
 an oxide semiconductor film having conductivity; and   a first conductive film over the oxide semiconductor film having conductivity,   wherein the first conductive film includes a Cu—Mn alloy film and a Cu film over the Cu—Mn alloy film,   wherein an outer periphery of the first conductive film is covered with a film including manganese oxide,   wherein the film including manganese oxide is in contact with the oxide semiconductor film having conductivity, the Cu—Mn alloy film, and the Cu film, and   wherein a hydrogen concentration of the oxide semiconductor film having conductivity is higher than or equal to 8×10 19  atoms/cm 3 .   
     
     
         9 . The semiconductor device according to  claim 8 , wherein a resistivity of the oxide semiconductor film having conductivity is higher than or equal to 1×10 −3  Ωcm and lower than 1×10 4  Ωcm. 
     
     
         10 . The semiconductor device according to  claim 8 ,
 wherein the oxide semiconductor film having conductivity includes hydrogen and an oxygen vacancy, and   wherein the hydrogen is located in the oxygen vacancy.   
     
     
         11 . The semiconductor device according to  claim 8 , further comprising a resistor,
 wherein the resistor includes the oxide semiconductor film having conductivity, the first conductive film, and a second conductive film, and   wherein the second conductive film is in contact with the oxide semiconductor film having conductivity.   
     
     
         12 . The semiconductor device according to  claim 8 , further comprising a capacitor,
 wherein the capacitor includes the oxide semiconductor film having conductivity, the first conductive film, an insulating film, and a second conductive film,   wherein the insulating film is over the oxide semiconductor film having conductivity and the first conductive film, and   wherein the second conductive film is over the insulating film and overlaps with the oxide semiconductor film having conductivity.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein the insulating film is a nitride insulating film. 
     
     
         14 . A semiconductor device comprising:
 a first oxide semiconductor film;   a transistor including a second oxide semiconductor film; and   a first conductive film in contact with the first oxide semiconductor film and the second oxide semiconductor film,   wherein the first conductive film includes a Cu—X alloy film and a Cu film over the Cu—X alloy film,   wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti,   wherein the first oxide semiconductor film has conductivity,   wherein a hydrogen concentration of the first oxide semiconductor film is higher than or equal to 8×10 19  atoms/cm 3 ,   wherein a hydrogen concentration of the second oxide semiconductor film is lower than or equal to 5×10 19  atoms/cm 3 , and   wherein a resistivity of the first oxide semiconductor film is higher than or equal to 1×10 −8  times and lower than 1×10 −1  times a resistivity of the second oxide semiconductor film.   
     
     
         15 . The semiconductor device according to  claim 14 , wherein the resistivity of the first oxide semiconductor film is higher than or equal to 1×10 −3  Ωcm and lower than 1×10 4  Ωcm. 
     
     
         16 . The semiconductor device according to  claim 14 , wherein the first conductive film includes a Cu—Mn alloy film. 
     
     
         17 . The semiconductor device according to  claim 16 ,
 wherein a part of the Cu film is covered with a film including manganese oxide, and   wherein the part of the Cu film is in contact with the film including manganese oxide.   
     
     
         18 . The semiconductor device according to  claim 14 ,
 wherein the first oxide semiconductor film includes hydrogen and an oxygen vacancy, and   wherein the hydrogen is located in the oxygen vacancy.   
     
     
         19 . The semiconductor device according to  claim 14 , further comprising a capacitor,
 wherein the capacitor includes the first oxide semiconductor film, the first conductive film, an insulating film, and a second conductive film,   wherein the insulating film is over the first oxide semiconductor film and the first conductive film, and   wherein the second conductive film is over the insulating film and overlaps with the first oxide semiconductor film.   
     
     
         20 . The semiconductor device according to  claim 19 , wherein the insulating film is a nitride insulating film.