US2015155301A1PendingUtilityA1

SEMICONDUCTOR SUBSTRATE WITH MULTIPLE SiGe REGIONS HAVING DIFFERENT GERMANIUM CONCENTRATIONS BY A SINGLE EPITAXY PROCESS

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Assignee: IBMPriority: Dec 4, 2013Filed: Jan 13, 2015Published: Jun 4, 2015
Est. expiryDec 4, 2033(~7.3 yrs left)· nominal 20-yr term from priority
Inventors:Thomas N. AdamKangguo ChengAli KhakifiroozAlexander Reznicek
H10P 14/3411H10P 14/3258H10P 14/3242H10P 14/3211H10P 14/38H10P 14/24H10D 84/0128H10D 84/83H10D 84/038H10D 86/01H10D 62/832H10D 62/235H10D 62/115H10D 62/83H10D 86/201H01L 29/16H01L 27/1203
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Claims

Abstract

A substrate with two SiGe regions having different Germanium concentrations and a method for making the same. The structure includes an extremely-thin-silicon-germanium-on-insulator (ETSGOI) substrate with at least two active regions, wherein each of the at least two active regions has a SiGe layer with uniform Germanium concentration, and the Germanium concentration of the SiGe layer of one of the at least two active regions is different than the Germanium concentration of the SiGe layer of the other of at least two active regions.

Claims

exact text as granted — not AI-modified
1 . A structure comprising:
 an extremely-thin-silicon-germanium-on-insulator (ETSGOI) substrate with at least two active regions, wherein each of the at least two active regions has a SiGe layer with uniform Germanium concentration, and the Germanium concentration of the SiGe layer of one of the at least two active regions is different than the Germanium concentration of the SiGe layer of the other of at least two active regions.   
     
     
         2 . The structure according to  claim 1 , wherein the Germanium concentration of the SiGe layers is between 10% and 60% Ge. 
     
     
         3 . The structure according to  claim 1 , wherein the concentration of Germanium of the SiGe layer of one of the active regions is between 10% and 30% Ge, and wherein the concentration of Germanium of the SiGe layer of the other active region is between 25% and 50% Ge. 
     
     
         4 . The structure according to  claim 1 , wherein the concentration of Germanium of the SiGe layer of one of the active regions is between 20% and 40% Ge, and wherein the concentration of Germanium of the SiGe layer of the other active region is between 35% and 60% Ge.

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