Enhancement Mode III-Nitride Switch

Abstract

According to one exemplary embodiment, an efficient and high speed E-mode N/Schottky switch includes a silicon transistor coupled with a D-mode III-nitride device, where the silicon transistor causes the D-mode III-nitride device to operate in an enhancement mode. The E-mode III-N/Schottky switch further includes a Schottky diode coupled across the silicon transistor so as to improve efficiency, recovery time, and speed of the E-mode III-N/Schottky switch. An anode of the Schottky diode can be coupled to a source of the silicon transistor and a cathode of the Schottky diode can he coupled to a drain of the silicon transistor. The Schottky diode can be integrated with the silicon transistor. In one embodiment the III-nitride device is a GaN device.

1 . An efficient and high speed E-mode III-N/Schottky switch comprising:
 a silicon transistor coupled with a D-mode III-nitride device, said silicon transistor causing said D-mode III-nitride device to operate in an enhancement mode;   a Schottky diode coupled across said silicon transistor;   said E-mode III-N/Schottky switch thereby achieving improved speed, efficiency, and reverse recovery time.   
     
     
         2 . The E-mode III-N/Schottky switch of  claim 1 , wherein two of said E-mode III-N/Schottky switches are coupled between a supply voltage and a ground to form a half-bridge configuration. 
     
     
         3 . The E-mode III-N/Schottky switch of  claim 1 , wherein four of said E-mode III-N/Schottky switches are coupled between a supply voltage and a ground to form a full-bridge configuration. 
     
     
         4 . The E-mode III-N/Schottky switch of  claim 3 , wherein a first and a second of said E-mode III-N/Schottky switches are coupled between said supply voltage and respective first and second terminals of an inductor and a third and a fourth of said E-mode III-N/Schottky switches are coupled between said respective first and second terminals of said inductor and said ground. 
     
     
         5 . The E-mode III-N/Schottky switch of  claim 1 , wherein a first said E-mode III-N/Schottky switch is coupled with a second said E-mode III-N/Schottky switch across a DC power source to form a buck circuit. 
     
     
         6 . The E-mode III-N/Schottky switch of  claim 5 , wherein a buck inductor and a buck capacitor are coupled across said first said E-mode III-N/Schottky switch. 
     
     
         7 . The E-mode III-N/Schottky switch of  claim 1 , wherein said silicon transistor is a low voltage FET. 
     
     
         8 . The E-mode III-N/Schottky switch of  claim 1 , wherein said D-mode III-Nitride device is a GaN device. 
     
     
         9 . The E-mode III-N/Schottky switch of  claim 1 , wherein an anode of said Schottky diode is coupled to a source of said silicon transistor and a cathode of said Schottky diode is coupled to a drain of said silicon transistor. 
     
     
         10 . The E-mode III-N/Schottky switch of  claim 1 , wherein said Schottky diode is integrated with said silicon transistor. 
     
     
         11 - 20 . (canceled) 
     
     
         21 . An E-mode III-N/Schottky switch comprising:
 a silicon transistor coupled with a D-mode III-nitride device, said silicon transistor causing said D-mode III-nitride device to operate in an enhancement mode;   a Schottky diode coupled across said silicon transistor;   said E-mode III-N/Schottky switch configured as a power switch in a power conversion circuit.   
     
     
         22 . The E-mode III-N/Schottky switch of  claim 21 , wherein two of said E-mode III-N/Schottky switches are coupled between a supply voltage and a ground to form a half-bridge configuration. 
     
     
         23 . The E-mode III-N/Schottky switch of  claim 21 , wherein four of said E-mode III-N/Schottky switches are coupled between a supply voltage and a ground to form a full-bridge configuration. 
     
     
         24 . The E-mode III-N/Schottky switch of  claim 21 , wherein a first said E-mode III-N/Schottky switch is coupled with a second said E-mode III-N/Schottky switch across a DC power source to form a buck circuit. 
     
     
         25 . The E-mode III-N/Schottky switch of  claim 24 , wherein a buck inductor and a buck capacitor are coupled across said first said E-mode III-N/Schottky switch. 
     
     
         26 . The E-mode III-N/Schottky switch of  claim 21 , wherein said D-mode III-Nitride device is a GaN device. 
     
     
         27 . An E-mode III-N/Schottky switch comprising:
 a silicon transistor coupled with a D-mode III-nitride device, said silicon transistor causing said D-mode III-nitride device to operate in an enhancement mode;   a Schottky diode coupled across said silicon transistor;   said E-mode III-N/Schottky switch configured as a power switch in a power conversion circuit;   wherein a gate of said D-mode III-nitride device is connected to a source of said silicon transistor.   
     
     
         28 . The E-mode III-N/Schottky switch of  claim 27 , wherein two of said E-mode III-N/Schottky switches are coupled between a supply voltage and a ground to form a half-bridge configuration. 
     
     
         29 . The E-mode III-N/Schottky switch of  claim 27 , wherein a first said E-mode III-N/Schottky switch is coupled with a second said E-mode III-N/Schottky switch across a DC power source to form a buck circuit. 
     
     
         30 . The E-mode III-N/Schottky switch of  claim 27 , wherein said D-mode III-Nitride device is a GaN device.