US2015155238A1PendingUtilityA1

Making an efuse

Assignee: IBMPriority: Jun 13, 2013Filed: Jan 29, 2015Published: Jun 4, 2015
Est. expiryJun 13, 2033(~6.9 yrs left)· nominal 20-yr term from priority
H10W 20/065H10W 20/493H01L 23/5256
44
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Claims

Abstract

A wafer chip and a method of designing the chip is disclosed. A first fuse is formed having a first critical dimension and a second fuse having a second critical dimension are formed in a layer of the chip. A voltage may be applied to burn out at least one of the first fuse and the second fuse. The first critical dimension of the first fuse may result from applying a first mask to the layer and applying light having a first property to the mask. The second critical dimension of the second fuse may result from applying a second mask to the layer and applying light having a second property to the mask.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A wafer chip, comprising:
 a first fuse having a first critical dimension formed in a layer of the wafer chip; and   a second fuse having a second critical dimension formed in the layer of the wafer chip;   wherein the first fuse and the second fuse are configured to burn out at different applied voltages.   
     
     
         2 . The wafer chip of  claim 1  wherein the first fuse is formed by applying a first mask to the layer to create a first channel in the layer having the first critical dimension and the second fuse is formed by applying a second mask to the layer to create a second channel in the layer having a second critical dimension. 
     
     
         3 . The wafer chip  claim 2 , further comprising applying light having a first property to the first mask and applying light having a second property to the second mask. 
     
     
         4 . The wafer chip of  claim 3 , wherein the first property and the second property further comprise at least one of: a frequency of the light; an intensity of the light; and a duration of exposure of the light. 
     
     
         5 . The wafer chip of  claim 1 , further wherein the first and second critical dimension further comprise at least one of a width and a cross-sectional area. 
     
     
         6 . The wafer chip of  claim 1 , wherein the first fuse is configured to control a first set of transistors in the layer and the second fuse is configured to control a second set of transistors in the layer. 
     
     
         7 . The wafer chip of  claim 1 , wherein at least one of the first fuse and the second fuse are configured to be burned out after a packaging stage of a manufacturing process of the chip to design the chip.

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