Method for manufacturing a semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate including a fin. The fin includes first and second fin portions. The first fin portion extends substantially in a horizontal direction to a surface of the semiconductor substrate. The second fin portion extends substantially in a vertical direction to the surface of the semiconductor substrate. The fin has a channel region.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device comprising:
 patterning a semiconductor substrate;   forming an isolation region and an active region on the substrate, the isolation and active regions being alternately adjacent while extending in a first direction;   forming a first trench portion in at least a surface portion of the semiconductor substrate corresponding to the active region;   forming second trench portions on the isolation region, wherein the second trench portions comprise upper trench portions and lower trench portions, and wherein the lower trench portions are wider than the upper trench portions;   forming a first fin portion, which is a first part of the active region, and which protrudes in a vertical direction to the surface of the substrate; and   forming second fin portions which are continuously connected to the first fin portion and extend in a horizontal direction to the surface of the substrate.