Halo region formation by epitaxial growth

Abstract

A structure including a semiconductor substrate including a source region and a drain region, a gate located above the semiconductor substrate and between the source region and the drain region, and two opposing halo regions being part of the source and drain regions, respectively, the halo regions being grown epitaxially, wherein the source region and the drain region include a stressor material.

We claim: 
     
         1 . A semiconductor device, comprising:
 a semiconductor substrate comprising a source region and a drain region;   a gate located above the semiconductor substrate and between the source region and the drain region; and   two opposing halo regions being part of the source and drain regions, respectively, the halo regions being grown epitaxially, wherein the source region and the drain region include a stressor material.   
     
     
         2 . The structure of  claim 1 , wherein the two opposing halo regions, each having a triangular shape, form a sigma-shaped source region and a sigma shaped-drain region. 
     
     
         3 . The structure of  claim 1 , wherein the embedded halo region has a crystalline orientation which is the same as a crystalline orientation in the semiconductor substrate. 
     
     
         4 . The structure of  claim 1 , wherein the stressor material in each of the source and drain regions comprise opposite doping polarity to their respective halo regions. 
     
     
         5 . The structure of  claim 1 , further comprising:
 a bottom halo region located beneath each of the source and drain regions and communicating within the source and drain regions, the bottom halo region being positioned below the channel region.   
     
     
         6 . The structure of  claim 5 , wherein the bottom halo region comprises growing an epitaxial halo with in-situ dopants.