Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition

Abstract

A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nano gap.

What is claimed is: 
     
         1 . A structure utilized in sequencing, the structure comprising:
 an oxide on a wafer;   a nanowire on the oxide;   a tapered lateral area of the nanowire from applying a helium ion beam, the tapered lateral area forming a first nanowire part and a second nanowire part, wherein the first nanowire part and the second nanowire part form a first nanogap;   the tapered lateral area forms a bridge connecting the first nanowire part and the second nanowire part; and   a second nanogap in the bridge forming a first extension from the first nanowire part and a second extension from the second nanowire part.   
     
     
         2 . The structure of  claim 1 , wherein the second nanogap is thinner than the first nanogap. 
     
     
         3 . The structure of  claim 1 , wherein the nanowire is tapered in order for the first extension and the second extension to have rectangular shapes after the second nanogap is cut.