US2015144263A1PendingUtilityA1
Substrate heating pedestal having ceramic balls
Est. expiryMay 30, 2027(~0.8 yrs left)· nominal 20-yr term from priority
H10P 72/0468H10P 72/0432H10P 72/0421H01J 2237/2001H01J 37/32724H01J 2237/0213Y10T29/49826H01J 2237/0268H01J 37/3244H01J 2237/335H01J 37/32357H01J 37/32871H01J 37/32477H01L 21/67069H01L 21/67207H01L 21/67103H10P 72/0406
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Claims
Abstract
A substrate heating pedestal for a process chamber for processing substrates is described. The pedestal comprises an annular plate comprising a surface having an array of recesses. A plurality of ceramic balls are each positioned in a recess on the surface of the annular plate to define a substrate receiving surface. A heating element is embedded in the annular plate.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A substrate heating pedestal for a process chamber for processing substrates, the substrate heating pedestal comprising:
(a) an annular plate comprising a surface having an array of recesses; (b) a plurality of ceramic balls, each ceramic ball being positioned in a recess on the surface of the annular plate to define a substrate receiving surface; and (c) a heating element embedded in the annular plate.
2 . A pedestal according to claim 1 wherein the annular plate comprises a first disk having the surface, and a second disk having a channel shaped to receive the heating element.
3 . A pedestal according to claim 1 wherein the channel of the second disk comprises a serpentine channel.
4 . A pedestal according to claim 1 wherein the first and second disks comprise aluminum.
5 . A pedestal according to claim 1 wherein a brazed bond joins the first and second disks.
6 . A pedestal according to claim 1 wherein the ceramic balls are composed of alumina oxide, quartz, sapphire, silicon nitride, synthetic corundum, zirconium oxide, or mixtures thereof.
7 . A pedestal according to claim 1 wherein the ceramic balls are embedded in the pedestal such that a top region of each ball is above the plane of the pedestal surface to define a raised substrate receiving surface.
8 . A pedestal according to claim 1 wherein ceramic balls comprise a diameter of from about 1 to about 3 mm.
9 . A pedestal according to claim 1 wherein the ceramic balls comprise a diameter that is sufficiently large to define a substrate receiving surface that is higher than the surface of the annular plate by from about 0.01 mm to about 0.5 mm.
10 . A pedestal according to claim 1 wherein the ceramic balls are spherical.
11 . A multi-chamber apparatus suitable for processing substrates, the apparatus comprising:
(a) a process chamber that is a substrate cleaning chamber, the substrate cleaning chamber comprising a process zone to hold a substrate to clean the substrate in an energized cleaning gas, the process zone having (i) a gas inlet for providing the energized cleaning gas, (ii) an exhaust port to exhaust gases, and (iii) a substrate heating pedestal according to claim 1 ; and (b) a remote chamber comprising a remote gas energizer for remotely energizing a cleaning gas by coupling energy to a cleaning gas in a gas energizer zone, the remote chamber having a gas outlet channel connected to the gas inlet channel of the substrate cleaning chamber.
12 . A substrate heating pedestal for a process chamber for processing substrates, the substrate heating pedestal comprising:
(a) an annular plate comprising a first disk having a surface with an array of recesses, and a second disk having a channel to receive a heating element; (b) a plurality of ceramic balls, each ceramic ball being positioned in a recess on the surface of the annular plate to define a substrate receiving surface; and (c) a heating element embedded in the channel of the second disk of the annular plate.
13 . A pedestal according to claim 12 wherein the channel of the second disk comprises a serpentine channel.
14 . A pedestal according to claim 12 wherein the first and second disks comprise aluminum, and a brazed bond joins the first and second disks.
15 . A pedestal according to claim 12 wherein the ceramic balls are composed of alumina oxide, quartz, sapphire, silicon nitride, synthetic corundum, zirconium oxide, or mixtures thereof.
16 . A pedestal according to claim 12 wherein the ceramic balls comprise a diameter that is sufficiently large to define a substrate receiving surface that is higher than the surface of the annular plate by from about 0.01 mm to about 0.5 mm.
17 . A substrate heating pedestal for a process chamber for processing substrates, the substrate heating pedestal comprising:
(a) an annular plate comprising a first disk having a surface with an array of recesses, and a second disk having a channel to receive a heating element; (b) a plurality of quartz balls, each quartz ball being positioned in a recess on the surface of the annular plate to define a substrate receiving surface; and (c) a heating element embedded in the channel of the second disk of the annular plate.
18 . A pedestal according to claim 17 wherein the channel of the second disk comprises a serpentine channel.
19 . A pedestal according to claim 17 wherein the first and second disks comprise aluminum, and a brazed bond joins the first and second disks.
20 . A pedestal according to claim 17 wherein the quartz balls comprise a diameter that is sufficiently large to define a substrate receiving surface that is higher than the surface of the annular plate by from about 0.01 mm to about 0.5 mm.Join the waitlist — get patent alerts
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