Substrate processing apparatus

Abstract

Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising:
 (a) performing a cycle a predetermined number of times, the cycle comprising (a-1) supplying a source gas to the substrate and (a-2) supplying a first reactive gas excited by plasma in a first plasma generation chamber to the substrate; and   (b) supplying a second reactive gas excited by plasma in a second plasma generation chamber installed independently from the first plasma generation chamber to the substrate.   
     
     
         2 . The method of  claim 1 , wherein the first reactive gas comprises a nitriding gas and the second reactive gas comprises an oxidizing gas. 
     
     
         3 . The method of  claim 2 , wherein a nitride film is formed in the step (a) and an oxynitride film is formed by oxidizing the nitride film in the step (b). 
     
     
         4 . The method of  claim 3 , wherein the source gas is adsorbed on a surface of the substrate in the step (a-1), and the source gas adsorbed on the surface of the substrate and the second reactive gas are reacted in the step (a-2). 
     
     
         5 . A substrate processing method comprising:
 (a) performing a cycle a predetermined number of times, the cycle comprising (a-1) supplying a source gas to the substrate and (a-2) supplying a first reactive gas excited by plasma in a first plasma generation chamber to the substrate; and   (b) supplying a second reactive gas excited by plasma in a second plasma generation chamber installed independently from the first plasma generation chamber to the substrate.   
     
     
         6 . A substrate processing apparatus comprising:
 a process chamber configured to process a substrate;   a source gas supply system configured to supply a source gas to the substrate in the process chamber;   a first plasma generation chamber configured to excite a first reactive gas by plasma;   a second plasma generation chamber configured to excite a second reactive gas by plasma, the second plasma generation chamber being different from the first plasma generation chamber;   a first reactive gas supply system configured to supply the first reactive gas into the first plasma generation chamber;   a second reactive gas supply system configured to supply the second reactive gas into the second plasma generation chamber, the second reactive gas being different from the first reactive gas;   a first plasma generation unit configured to generate plasma in the first plasma generation chamber and excite the first reactive gas by plasma to generate an active species of the first reactive gas;   a first gas ejection port provided at the first plasma generation chamber and configured to eject the active species of the first reactive gas to the substrate in the process chamber;   a second plasma generation unit configured to generate plasma in the second plasma generation chamber and excite the second reactive gas by plasma to generate an active species of the second reactive gas;   a second gas ejection port provided at the second plasma generation chamber and configured to eject the active species of the second reactive gas to the substrate in the process chamber; and   a controller configured to control the source gas supply system, the first reactive gas supply system, the second reactive gas supply system, the first plasma generation unit and the second plasma generation unit so as to perform (a) performing a cycle a predetermined number of times, the cycle comprising (a-1) supplying the source gas to the substrate and (a-2) supplying the first reactive gas excited by plasma in the first plasma generation chamber to the substrate; and (b) supplying the second reactive gas excited by plasma in the second plasma generation chamber installed independently from the first plasma generation chamber to the substrate.