Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition

Abstract

A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nano gap.

What is claimed is: 
     
         1 . A method for manufacturing a nanogap, the method comprising:
 disposing an oxide on a wafer;   disposing a nanowire on the oxide;   applying a helium ion beam to taper the nanowire laterally into a first nanowire part and a second nanowire part, the first nanowire part and the second nanowire part forming a first nanogap in a nanodevice;   wherein applying the helium ion beam to taper the nanowire laterally forms a bridge connecting the first nanowire part and the second nanowire part; and   cutting a second nanogap in the bridge to form a first extension from the first nanowire part and form a second extension from the second nanowire part.   
     
     
         2 . The method of  claim 1 , wherein the second nanogap is thinner than the first nanogap. 
     
     
         3 . The method of  claim 1 , wherein the nanowire is tapered in order for the first extension and the second extension to have triangular shapes after the second nanogap is cut. 
     
     
         4 . The method of  claim 1 , wherein the second nanogap is formed by the first extension and the second extension; and
 wherein a size of the second nanogap accommodates a single base or a single nucleotide of a target molecule in which the target molecule includes at least one of a deoxyribonucleic acid molecule, a ribonucleic acid molecule, and a protein; and   when the size of the second nanogap allows the single base or the single nucleotide be sequenced via a measured current while in the second nanogap between the first and the second extensions.   
     
     
         5 . The method of  claim 1 , wherein the first extension and the second extension both extend into the first nanogap.