Substrate processing apparatus and substrate processing method

Abstract

An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.

1 . A substrate processing apparatus for removing reaction products generated in etching an etching target layer included in a target object, comprising:
 a processing chamber defining a space;   a partition unit which is disposed in the processing chamber and partitions the space into a plasma generating space and a substrate processing space, the partition unit being configured to suppress transmission of ions and vacuum ultraviolet rays;   a plasma source configured to generate a plasma in the plasma generating space;   a mounting table disposed in the substrate processing space for mounting the target object thereon;   a first processing gas supply unit configured to supply a first processing gas into the plasma generating space, the first processing gas to be dissociated by the plasma to generate radicals; and   a second processing gas supply unit configured to supply a second processing gas into the substrate processing space, the second processing gas reacting with the reaction products without being exposed to the plasma.   
     
     
         2 . The substrate processing apparatus of  claim 1 , further comprising a gas exhaust unit which is provided to communicate with the substrate processing space and depressurizes the space of the processing chamber. 
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein the partition unit includes at least two plate-shaped members arranged to overlap with each other seen from the plasma generating space toward the substrate processing space, each plate-shaped member having a plurality of through-holes penetrating therethrough in an overlapping direction, and
 wherein, the through-holes of one of the at least two plate-shaped members do not overlap with the through-holes of the other ones of the at least two plate-shaped members in the overlapping direction.   
     
     
         4 . The substrate processing apparatus of  claim 1 , wherein the radicals cause a reduction reaction, an oxidation reaction, a chloride reaction or a fluoride reaction. 
     
     
         5 . The substrate processing apparatus of  claim 1 , wherein the first processing gas contains hydrogen atoms, oxygen atoms, chlorine atoms or fluorine atoms. 
     
     
         6 . The substrate processing apparatus of  claim 1 , wherein the second processing gas includes a gas whose reaction with the reaction products is affected by a temperature of the mounting table. 
     
     
         7 . The substrate processing apparatus of  claim 6 , wherein the second processing gas includes an electron-donating gas. 
     
     
         8 . A substrate processing method for removing reaction products generated in etching an etching target layer included in a target object by using a substrate processing apparatus including:
 a processing chamber defining a space;   a partition unit which is disposed in the processing chamber and partitions the space into a plasma generating space and a substrate processing space, the partition unit being configured to suppress transmission of ions and vacuum ultraviolet rays;   a plasma source configured to generate a plasma in the plasma generating space;   a mounting table disposed in the substrate processing space for mounting the target object thereon;   a first processing gas supply unit configured to supply a first processing gas into the plasma generating space, the first processing gas to be dissociated by the plasma to generate radicals; and   a second processing gas supply unit configured to supply a second processing gas into the substrate processing space, the second processing gas reacting with the reaction products without being exposed to the plasma, the substrate processing method comprising:   generating the radicals by supplying the first processing gas from the first processing gas supply unit into the plasma generating space in which a plasma is generated;   moving the generated radicals into the substrate processing space to cause a reaction with the reaction products; and   supplying the second processing gas from the second processing gas supply unit into the substrate processing space to cause a reaction with the reaction products.   
     
     
         9 . The substrate processing method of  claim 8 , wherein the generating, the moving and the supplying are performed in the same substrate processing apparatus. 
     
     
         10 . The substrate processing method of  claim 8 , wherein the generating and the moving are performed before or at the same time of the supplying. 
     
     
         11 . The substrate processing method of  claim 8 , wherein the etching target layer includes a metal-containing layer.