Semiconductor device structures including damascene structures

Abstract

A method and apparatus for providing a conductive structure adjacent to a damascene conductive structure in a semiconductor device structure. The semiconductor device structure includes an insulation layer with at least one damascene conductive structure formed therein, wherein the at least one damascene conductive structure includes an insulative, protective layer disposed thereon. The insulative material of the protective layer is able to resist removal by at least some suitable etchants for the insulative material of the insulation layer adjacent to the at least one damascene conductive structure. A self-aligned opening is formed by removing a portion of an insulation layer adjacent the at least one damascene conductive structure. The self-aligned opening is then filled with a conductive material to thereby provide another conductive structure adjacent to the at least one damascene conductive structure.

1 . A semiconductor device structure, comprising:
 at least one conductive structure on a semiconductor substrate;   a first insulative material overlying at least a portion of the at least one conductive structure;   at least one trench in a second insulative material overlying the first insulative material;   a third insulative material at least partially lining the at least one trench;   a conductive material at least partially filling the at least one trench; and   at least another conductive structure overlying and in contract with the at least one conductive structure.   
     
     
         2 . The semiconductor device structure of  claim 1 , wherein the at least another conductive structure at least partially overlays an insulative cap on the conductive material. 
     
     
         3 . The semiconductor device structure of  claim 1 , wherein the at least another conductive structure extends through the first insulative material. 
     
     
         4 . The semiconductor device structure of  claim 1 , wherein the at least another conductive structure comprises a conductive plug. 
     
     
         5 . A semiconductor device structure, comprising:
 a plurality of conductive structures laterally adjacent to a first insulative material;   at least another conductive structure between at least two conductive structures of the plurality, the at least another conductive structure comprising a surface elevated relative to an upper surface of each of the at least two conductive structures of the plurality; and   a second insulative material directly adjacent to sidewalls of each of the at least another conductive structure and the at least two conductive structures of the plurality.   
     
     
         6 . The semiconductor device structure of  claim 5 , further comprising a silicide material over each of the at least two conductive structures of the plurality. 
     
     
         7 . The semiconductor device structure of  claim 5 , further comprising a gate oxide material between each of the at least two conductive structures of the plurality and an active surface of a semiconductor substrate. 
     
     
         8 . The semiconductor device structure of  claim 5 , wherein the plurality of conductive structures overlies and traverses a conductive line. 
     
     
         9 . A semiconductor device structure, comprising:
 at least one conductive structure over a substrate;   at least one other conductive structure over the substrate;   an insulative material between the at least one conductive structure and the at least one other conductive structure; and   another insulative material at least partially overlying the at least one conductive structure and the insulative material, an upper surface of the another insulative material being coplanar with an upper surface of the at least one other conductive structure.   
     
     
         10 . The semiconductor device structure of  claim 9 , further comprising additional conductive structures disposed between the substrate and the at least one conductive structure, each conductive structures of the additional conductive structures being in physical contact with a respective conductive structure of the at least one conductive structure and the at least one other conductive structure. 
     
     
         11 . The semiconductor device structure of  claim 9 , further comprising an additional insulative material laterally adjacent to the insulative material. 
     
     
         12 . The semiconductor device structure of  claim 11 , wherein an upper surface of the additional insulative material is coplanar with an upper surface of the insulative material. 
     
     
         13 . The semiconductor device structure of  claim 9 , wherein the insulative material extends through an additional insulative material disposed between the substrate and the another insulative material. 
     
     
         14 . The semiconductor device structure of  claim 1 , wherein the at least one conductive structure comprises an elongate conductive structure over which conductive material and the at least another conductive structure are disposed. 
     
     
         15 . The semiconductor device structure of  claim 1 , wherein the third insulative material is disposed directly between the conductive material and the at least another conductive structure. 
     
     
         16 . The semiconductor device structure of  claim 1 , wherein the first insulative material is disposed directly between the conductive material and the at least one conductive structure. 
     
     
         17 . The semiconductor device structure of  claim 1 , wherein an upper surface of the conductive material occupies a lower elevation than an upper surface of the at least another conductive structure. 
     
     
         18 . The semiconductor device structure of  claim 1 , wherein a lower surface of the conductive material occupies a higher elevation, relative to an upper surface of the semiconductor substrate, than a lower surface of the at least another conductive structure. 
     
     
         19 . The semiconductor device structure of  claim 1 , further comprising a fourth insulative material at least partially overlying the second insulative material and the third insulative material. 
     
     
         20 . The semiconductor device structure of  claim 19 , wherein the at least another conductive structure extends through the fourth insulative material.