US2015123080A1PendingUtilityA1

Electronic device, stacked structure, and manufacturing method of the same

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Assignee: NAT INST OF ADVANCED IND SCIENPriority: May 10, 2012Filed: Nov 10, 2014Published: May 7, 2015
Est. expiryMay 10, 2032(~5.8 yrs left)· nominal 20-yr term from priority
Inventors:Junichi Yamaguchi
H10P 95/11H10P 14/3406H10P 14/3248H10P 14/3241H10P 14/3238H10P 14/3202H10P 14/2905H10P 14/38H10P 14/27H10P 14/24H10D 64/691H10D 64/518H10D 64/516H10D 62/882H10D 30/6758H10D 30/6757H10D 30/6741H10D 30/6739H10D 30/472H10D 30/031H10D 30/015H10D 30/6704H01L 21/02664H01L 21/02527H01L 29/78684H01L 29/517H01L 29/1606H01L 21/02439B82Y 10/00H10K 10/476H10K 85/20H10K 10/484
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Claims

Abstract

A stacked structure includes: an insulating substrate; a graphene film that is formed on the insulating substrate; and a protective film that is formed on the graphene film and is made of a transition metal oxide, which is, for example, Cr 2 O 3 . Thereby, at the time of transfer of the graphene, polymeric materials such as a resist are prevented from directly coming into contact with the graphene and nonessential carrier doping on the graphene caused by a polymeric residue of the resist is suppressed.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An electronic device, comprising:
 a substrate   a graphene film that is formed on the substrate;   a protective film that is formed on the graphene film and is made of a transition metal oxide;   an insulating layer that is formed on the protective film; and   an electrode that is formed on the insulating layer.   
     
     
         2 . The electronic device according to  claim 1 , wherein
 the insulating layer is made of a high dielectric constant material.   
     
     
         3 . The electronic device according to  claim 2 , wherein
 the insulating layer has a thickness being a value falling within a range of 5 nm to 10 nm.   
     
     
         4 . The electronic device according to  claim 1 , wherein
 a transition metal constituting the transition metal oxide of the protective film is one type selected from Sc, Cr, Mn, Co, Zn, Y, Zr, Mo, and Ru.   
     
     
         5 . A manufacturing method of a stacked structure, comprising:
 forming a catalyst on a growth substrate;   forming a graphene film on the growth substrate by using the catalyst;   forming, on the graphene film, a protective film made of a transition metal oxide; and   peeling the graphene film and the protective film off the growth substrate and transferring the graphene film and the protective film onto a substrate.   
     
     
         6 . the manufacturing method of the stacked structure according to  claim 5 , wherein
 a transition metal constituting the transition metal oxide of the protective film is one type selected from Sc, Cr, Mn, Co, Zn, Y, Zr, Mo, and Ru.   
     
     
         7 . A stacked structure, comprising:
 a substrate;   a graphene film that is formed on the substrate; and   a protective film that is formed on the graphene film and is made of a transition metal oxide.   
     
     
         8 . The stacked structure according to a  claim 7 , wherein
 a transition metal constituting the transition metal oxide of the protective film is one type selected from Sc, Cr, Mn, Co, Zn, Y, Zr, Mo, and Ru.

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