Laser and plasma etch wafer dicing with a double sided uv-curable adhesive film

Abstract

Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.

What is claimed is: 
     
         1 . A system for dicing a semiconductor wafer, the semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
 a carrier substrate to support the semiconductor wafer;   a tape applicator to apply a first side of the double-sided ultraviolet (UV)-curable adhesive film to the carrier substrate,   a mounting apparatus to align the semiconductor wafer over the carrier substrate and contact the semiconductor wafer to a second side of the double-sided UV-curable adhesive film;   wherein UV radiation transmitted through the carrier substrate is to cure the second adhesive side of the UV-curable adhesive film more completely than the first adhesive side;   a laser scribe apparatus comprising a laser to pattern a mask disposed over the semiconductor wafer to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; and   a plasma etch chamber to etch the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.   
     
     
         2 . The system of  claim 1 , further comprising:
 an ultra-violet (UV) light source configured to irradiate the double-sided UV-curable adhesive film to cure the second side of the double-sided UV-curable adhesive film more completely than the first side.   
     
     
         3 . The system of  claim 2 , further comprising:
 a die harvester to detach the singulated integrated circuits from the UV-curable adhesive film after curing the second side more completely than the first side.   
     
     
         4 . The system of  claim 1 , wherein the carrier substrate has a diameter that is substantially the same as the semiconductor wafer. 
     
     
         5 . The system of  claim 1 , wherein the carrier substrate comprises a rigid, UV transmissible carrier. 
     
     
         6 . The system of  claim 5 , wherein the carrier substrate comprises one or more of: glass, fused quartz, sapphire, and a ceramic. 
     
     
         7 . The system of  claim 1 , wherein the carrier substrate has a thickness in a range of 300 um to 800 um. 
     
     
         8 . The system of  claim 1 , wherein the carrier substrate is doped to have a resistivity of 10 8  Ohm-cm or less at 20° C. 
     
     
         9 . A system for dicing a semiconductor wafer, the semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
 a carrier substrate to support the semiconductor wafer;   a tape applicator to apply a first side of double-sided ultraviolet (UV)-curable adhesive film to the semiconductor wafer,   a mounting apparatus to align the taped semiconductor wafer over the carrier substrate, a second side of the double-sided UV-curable adhesive film to contact the carrier substrate;   wherein UV radiation transmitted through the carrier substrate is to cure the first side of the UV-curable adhesive film more completely than the second side;   a laser scribe apparatus comprising a laser to pattern a mask disposed over the semiconductor wafer to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; and   a plasma etch chamber to etch the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.   
     
     
         10 . The system of  claim 9 , further comprising:
 an ultra-violet (UV) light source configured to irradiate the double-sided UV-curable adhesive film to cure the first side of the double-sided UV-curable adhesive film more completely than the second side.   
     
     
         11 . The system of  claim 10 , further comprising:
 a die harvester to detach the singulated integrated circuits from the UV-curable adhesive film after curing the second side more completely than the first side.   
     
     
         12 . The system of  claim 9 , wherein the carrier substrate has a diameter that is substantially the same as the semiconductor wafer. 
     
     
         13 . The system of  claim 9 , wherein the carrier substrate comprises a rigid, UV transmissible carrier. 
     
     
         14 . The system of  claim 13 , wherein the carrier substrate comprises one or more of: glass, fused quartz, sapphire, and a ceramic. 
     
     
         15 . The system of  claim 9 , wherein the carrier substrate has a thickness in a range of 300 um to 800 um. 
     
     
         16 . The system of  claim 9 , wherein the carrier substrate is doped to have a resistivity of 10 8  Ohm-cm or less at 20° C. 
     
     
         17 . A system for dicing a semiconductor wafer, the semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
 a rigid carrier substrate to support and couple with the semiconductor wafer via a double-sided ultraviolet (UV)-curable adhesive film, a first side of the double-sided UV-curable adhesive film to contact the semiconductor wafer and a second side of the double-sided UV-curable adhesive film to contact the rigid carrier substrate;   a laser scribe apparatus comprising a laser to pattern a mask disposed over the semiconductor wafer to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits;   a plasma etch chamber to etch the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits; and   an ultra-violet (UV) light source configured to irradiate the double-sided UV-curable adhesive film to cure the first side of the double-sided UV-curable adhesive film more completely than the second side.   
     
     
         18 . The system of  claim 17 , further comprising:
 a die harvester to detach the singulated integrated circuits from the UV-curable adhesive film after curing the first side more completely than the second side.   
     
     
         19 . The system of  claim 17 , wherein the carrier substrate has a diameter that is substantially the same as the semiconductor wafer. 
     
     
         20 . The system of  claim 17 , wherein the carrier substrate comprises one or more of: glass, fused quartz, sapphire, and a ceramic.