Methods of Forming Patterns, and Methods of Forming Integrated Circuitry

Abstract

Some embodiments include methods of forming a pattern. First lines are formed over a first material, and second lines are formed over the first lines. The first and second lines form a crosshatch pattern. The first openings are extended through the first material. Portions of the first lines that are not covered by the second lines are removed to pattern the first lines into segments. The second lines are removed to uncover the segments. Masking material is formed between the segments. The segments are removed to form second openings that extend through the masking material to the first material. The second openings are extended through the first material. The masking material is removed to leave a patterned mask comprising the first material having the first and second openings therein. In some embodiments, spacers may be formed along the first and second lines to narrow the openings in the crosshatch pattern.

I/we claim: 
     
         1 . A method of forming a pattern, comprising:
 forming a first material over and in direct physical contact with an underlying material;   forming a crosshatch pattern over the first material, the crosshatch patterns having first openings;   narrowing the first openings in the crosshatch pattern;   extending the first openings through the first material;   after the extending, further patterning the cross hatch pattern;   forming a masking material over the first material and within the first openings;   forming second openings extending through the masking material to the first material;   extending the second openings through the first material; and   removing the masking material.   
     
     
         2 . The method of  claim 1  wherein the first material is over a base, and further comprising transferring a pattern from the patterned mask into the base. 
     
     
         3 . The method of  claim 1  further comprising forming electrically conductive material within the first and second openings of the patterned mask. 
     
     
         4 . The method of  claim 1  wherein the first material comprises amorphous silicon and/or polycrystalline silicon. 
     
     
         5 . A method of forming a pattern, comprising:
 forming stacked first and second materials over a base, the first material being over and in direct contact with an underlying material selected from the group consisting of silicon nitride, metals, metal comprising compositions and conductively doped semiconductor materials, the second material being over the first material;   patterning the second material into spaced-apart first lines;   forming a third material over the first lines;   patterning the third material into spaced-apart second lines, the first and second lines forming a crosshatch pattern over the first material;   forming spacers along sidewalls of the first and second lines to narrow the first openings in the crosshatch pattern;   extending the narrowed first openings through the first material;   patterning the first lines into segments;   forming masking material between the segments, the masking material filling the narrowed first openings;   removing the segments to form second openings through the masking material;   extending the second openings through the first material; and   removing the masking material.   
     
     
         6 . The method of  claim 5  wherein the patterning of the second material comprises forming a photolithographically-patterned photoresist mask over the second material, and transferring a pattern from the photoresist mask into the second material. 
     
     
         7 . The method of  claim 6  wherein the photolithographically-patterned photoresist mask comprises spaced-apart features, and further comprising trimming the features prior to transferring the pattern from the photoresist mask into the second material. 
     
     
         8 . The method of  claim 5  wherein the third material is a carbon-containing material. 
     
     
         9 . The method of  claim 5  wherein the patterning of the third material into the second lines comprises forming a hard mask over the third material, forming a photolithographically-patterned photoresist mask over the hard mask, transferring a pattern from the photoresist mask into the hard mask, and transferring a pattern from the hard mask into the third material. 
     
     
         10 . The method of  claim 9  wherein the photolithographically-patterned photoresist mask comprises spaced-apart features, and further comprising trimming the features prior to transferring the pattern from the photoresist mask into the hard mask. 
     
     
         11 . A method of forming a semiconductor construction comprising:
 providing a base and a stack of materials over the base;   forming a patterned photoresist over the stack of materials, the patterned photoresist comprising a plurality of spaced apart lines;   trimming the patterned photoresist to form narrowed lines;   transferring the pattern of the trimmed photoresist into an uppermost material comprised by the stack to form patterned first material lines;   forming a spin-on material over the patterned first material lines;   forming a hardmask material over the spin-on material;   patterning the hardmask material and the spin-on material into a series of patterned lines;   removing the hardmask material;   trimming the series of patterned lines; the series of patterned lines and patterned first material lines forming a lattice having openings therethrough; the patterned lines and the patterned first material lines having maximum linewidths of 40 nm;   narrowing the openings; and   extending the openings into a second material comprised by the stack.   
     
     
         12 . The method of  claim 11  wherein the spin-on material comprises one or more type of organic polymer. 
     
     
         13 . The method of  claim 11  wherein the narrowing the openings comprises formation of spacers within the openings. 
     
     
         14 . The method of  claim 13  further comprising removing the spacers after extending the openings into the second material. 
     
     
         15 . The method of  claim 11  wherein the patterned first material lines are orthogonal relative to the series of patterned lines.