Semiconductor device and method for fabricating the same

Abstract

A semiconductor device includes a bit line disposed over a semiconductor substrate, a supporting film being perpendicular to the bit line, a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film, and a second storage node contact having a line shape, disposed over the first storage node contact and the bit line, isolated by the supporting film, and patterned in a diagonal direction across the bit line.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a bit line disposed over a semiconductor substrate;   a supporting film perpendicular to the bit line and partially covering a top surface of the bit line;   a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film; and   a second storage node contact having a line shape, disposed over the first storage node contact and the bit line, isolated by the supporting film, and patterned to extend diagonally across the bit line.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the supporting film is patterned when the second storage node contact is patterned in a diagonal direction, such that an upper portion of the supporting film is alternately arranged with the second storage node contact in the diagonal direction. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the patterned second storage node contact has a first top surface and a second top surface that have a step difference therebetween. 
     
     
         4 . The semiconductor device according to  claim 3 , wherein the first top surface is located at a higher level than the top surface of the bit line, and the second top surface is located at a lower level than the top surface of the bit line. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein the patterned supporting film has a first top surface and a second top surface that have step difference therebetween. 
     
     
         6 . The semiconductor device according to  claim 5 , wherein the first top surface is located over the bit line, and the second top surface is located at substantially the same level as the top surface of the bit line or located below the top surface of the bit line. 
     
     
         7 . The semiconductor device according to  claim 5 , wherein the first top surface is located at a higher level than the top surface of the bit line, and the second top surface is located at a higher level than a top surface of the first storage node contact. 
     
     
         8 . The semiconductor device according to  claim 4 , wherein an area of the first top surface of the second storage node contact is smaller than an area of a top surface of the first storage node contact. 
     
     
         9 . A semiconductor device comprising:
 first and second bit lines spaced apart from each other by a first distance over a semiconductor substrate;   first and second supporting films perpendicular to the first and second bit lines, spaced apart from each other by a second distance, and having a line shape to partially cover the first and second bit lines; and   first and second storage node contacts that are self-aligned and deposited between the first and second supporting films.   
     
     
         10 . The semiconductor device according to  claim 9 , wherein the first storage node contact has an island type over the semiconductor substrate and is disposed among the first and second bit lines and the first and second supporting films. 
     
     
         11 . The semiconductor device according to  claim 10 , wherein the second storage node contact has a line shape and is disposed over the first storage node contact and the first and second bit lines. 
     
     
         12 . The semiconductor device according to  claim 11 , wherein the second storage node contact is disposed between the first and second supporting films. 
     
     
         13 . The semiconductor device according to  claim 9 , further comprising:
 a storage node disposed over the second storage node contact.   
     
     
         14 . The semiconductor device according to  claim 9 , wherein an area of a top surface of the second storage node contact is smaller than an area of a top surface of the first storage node contact.