Semiconductor Device Predictive Dynamic Thermal Management

Abstract

A semiconductor device includes a memory storing a lookup table including stored values associated with modes of operation of a component of the semiconductor device. A monitor monitors an operating parameter of the component in real-time, and reports a calculated value associated with the same. A power manager determines a change in the mode of operation of the component based on a comparison of the calculated value with a corresponding stored value, and adjusts a current mode of operation of the component in real-time.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a monitor configured to determine a value of an operating parameter of a component of the semiconductor device during a current mode of operation in a plurality of modes of operation; and   a power manager configured to:
 determine a calculated value corresponding to the value, and 
 adjust an operating voltage or an operating frequency of the component to prevent the calculated value from exceeding a predetermined threshold amount. 
   
     
     
         2 . The semiconductor device of  claim 1 , wherein the power manager is further configured to determine a change in the current mode of operation. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the monitor comprises:
 a ring-oscillator temperature monitor.   
     
     
         4 . The semiconductor device of  claim 1 , wherein the calculated value comprises:
 a future operating temperature of the component, and   wherein the power manager is further configured to:
 predict the future operating temperature based on a previous temperature measurement of the component. 
   
     
     
         5 . The semiconductor device of  claim 4 , wherein the predetermined threshold amount comprises:
 a predetermined temperature threshold of the component, and   wherein the power manager is further configured to:
 adjust the operating voltage or the operating frequency of the component based on a comparison of the predicted future operating temperature with the predetermined temperature threshold. 
   
     
     
         6 . The semiconductor device of  claim 1 , wherein the power manager is further configured to suspend operation of the component in the current mode of operation for a predetermined period of time to prevent the calculated value from exceeding the predetermined threshold amount. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the monitor is located near a hot spot of the component. 
     
     
         8 . A semiconductor device, comprising:
 a plurality of monitors configured to determine a plurality of values corresponding to a component of the semiconductor device; and   a power manager configured to:
 determine a plurality of current values of the plurality of values, 
 determine, based on the plurality of current values, a predicted future temperature of the component, 
 compare the predicted future temperature with a temperature threshold of the component, and 
 adjust an operating voltage or an operating frequency of the component to prevent a temperature of the component from reaching the temperature threshold. 
   
     
     
         9 . The semiconductor device of  claim 8 , wherein the monitor comprises:
 a ring-oscillator temperature monitor.   
     
     
         10 . The semiconductor device of  claim 9 , further comprising:
 a plurality of ring-oscillator temperature monitors including the ring-oscillator temperature monitor.   
     
     
         11 . The semiconductor device of  claim 8 , wherein the plurality of values are classified according to a process corner, a supply voltage, and the operating frequency of the component. 
     
     
         12 . The semiconductor device of  claim 8 , further comprising:
 a silicon performance monitor configured to identify a process corner of the semiconductor device.   
     
     
         13 . The semiconductor device of  claim 8 , wherein, upon determining that a new application is executing using the semiconductor device, the power manager is configured to:
 read the plurality of current values;   determine, based on the plurality of current values, whether there is a change in operation of the component.   
     
     
         14 . The semiconductor device of  claim 8 , wherein the power manager is configured to adjust the operating voltage or the operating frequency of the component based on a plurality of baseline values of the plurality of values. 
     
     
         15 . The semiconductor device of  claim 8 , wherein the plurality of monitors are located next to a plurality of known hot spots of the component. 
     
     
         16 . The semiconductor device of  claim 8 , wherein the power manager is configured to predict, based on the plurality of current values, a location of a future hot spot of the component. 
     
     
         17 . A method, comprising:
 determining, based on a plurality of readings from a plurality of monitors, a plurality of current values corresponding to a temperature of a component of a semiconductor device;   determining, based on the plurality of current values, a predicted future temperature of the component;   comparing the predicted future temperature with a temperature threshold of the component; and   adjusting an operating voltage or an operating frequency of the component to prevent a temperature of the component from reaching the temperature threshold.   
     
     
         18 . The method of  claim 17 , wherein the plurality of monitors are located near a corresponding plurality of hot spots of the component. 
     
     
         19 . The method of  claim 17 , further comprising:
 determining, based on the plurality of current values, whether there is a change in operation of the component.   
     
     
         20 . The method of  claim 17 , further comprising:
 predicting, based on the plurality of current values, a location of a future hot spot of the component.