Semiconductor sensor reliability

Abstract

Embodiments of the present invention provide a semiconductor sensor reliability system and method. Specifically, the present invention provides in-situ positioning of a reliability sensor (hereinafter sensors) within each functional block, as well as at critical locations, of a semiconductor system. The quantity and location of the sensors are optimized to have maximum sensitivity to known process variations. In general, the sensor models a behavior (e.g., aging process) of the location (e.g., functional block) in which it is positioned and comprises a plurality of stages connected as a network and a self-digitizer. Each sensor has a mode selection input for selecting a mode thereof and an operational trigger input for enabling the sensor to model the behavior. The model selection input and operation trigger enable the sensor to have an operational mode in which the plurality of sensors are subject to an aging process, as well as a measurement mode in which an age of the plurality of sensors is outputted.

What is claimed is: 
     
         1 . A semiconductor system, comprising:
 a plurality of functional blocks; and   a plurality of sensors positioned on the plurality of functional blocks, wherein each of the plurality of functional blocks has at least one sensor, and wherein each of the plurality of sensors models a behavior of the location in which it is positioned, wherein at least one of the plurality of sensors is coupled directly atop a boundary between at least two functional blocks at a connection point to collect sensed data corresponding to a gradient in at least one of: process variation or aging artifacts, between the at least two functional blocks.   
     
     
         2 . The semiconductor sensor reliability system of  claim 1 , wherein at least one of the plurality of sensors is positioned at a location within a functional block subject to semiconductor system manufacturing process variation. 
     
     
         3 . The semiconductor sensor reliability system of  claim 1 , wherein at least one of the plurality of sensors is positioned at a connection point between functional blocks to collect sensed data about lithographic limits and gate perimeter density at the connection point. 
     
     
         4 . The semiconductor sensor reliability system of  claim 1 , each of the plurality of sensors having a mode selection input for selecting a mode of the plurality of sensors and an operational trigger input for enabling the plurality of sensors to model the behavior. 
     
     
         5 . The semiconductor sensor reliability system of  claim 4 , the mode selection input enabling the plurality of sensors to have:
 an operational mode in which the plurality of sensors are subject to an aging process; and   a measurement mode in which an age of the plurality of sensors are outputted.   
     
     
         6 . The semiconductor sensor reliability system of  claim 1 , wherein each of the plurality of sensors is selected to have an independent optimal sensitivity based on its location. 
     
     
         7 . The semiconductor sensor reliability system of  claim 6 , wherein the optimal sensitivity is determined according to sensing range and timing. 
     
     
         8 . A semiconductor system, comprising:
 a plurality of functional blocks; and   a plurality of sensors positioned on the plurality of functional blocks, wherein each of the plurality of functional blocks has at least one sensor, and wherein each of the plurality of sensors models an aging process of the location in which it is positioned, wherein at least one of the plurality of sensors is coupled directly atop a boundary between at least two functional blocks at a connection point to collect sensed data corresponding to a gradient in at least one of: process variation or aging artifacts, between the at least two functional blocks.   
     
     
         9 . The semiconductor sensor reliability system of  claim 8 , wherein at least one of the plurality of sensors is positioned at a location within a functional block subject to semiconductor system manufacturing process variation. 
     
     
         10 . The semiconductor sensor reliability system of  claim 8 , wherein at least one of the plurality of sensors is positioned at a connection point between functional blocks to collect sensed data about lithographic limits and gate perimeter density at the connection point. 
     
     
         11 . The semiconductor sensor reliability system of  claim 8 , each of the plurality of sensors having a mode selection input for selecting a mode of the plurality of sensors and an operational trigger input for enabling the plurality of sensors to model the aging process. 
     
     
         12 . The semiconductor sensor reliability system of  claim 11 , the mode selection input enabling the plurality of sensors to have:
 an operational mode in which the plurality of sensors are subject to the aging process; and   a measurement mode in which an age of the plurality of sensors are outputted.   
     
     
         13 . The semiconductor sensor reliability system of  claim 8 , wherein each of the plurality of sensors is selected to have an independent optimal sensitivity based on its location. 
     
     
         14 . The semiconductor sensor reliability system of  claim 13 , wherein the optimal sensitivity is determined according to sensing range and timing. 
     
     
         15 . A method for sensing semiconductor reliability, comprising:
 observing defect-sensitive locations within a semiconductor system using a plurality of sensors positioned there on, wherein each of the plurality of functional blocks has at least one sensor, wherein at least one of the plurality of sensors is coupled directly atop a boundary between at least two functional blocks at a connection point to collect sensed data corresponding to a gradient in at least one of: process variation or aging artifacts, between the at least two functional blocks, and wherein at least one of the plurality of sensors is positioned at a second connection point between at least two functional blocks to collect sensed data about lithographic limits and gate perimeter density at the second connection point; and   engaging an operational model of the plurality of the sensors to cause each sensor to model an aging process of the defect-sensitive location on which it is positioned.   
     
     
         16 . The method of  claim 15 , wherein the defect-sensitive locations further comprise a location within the functional block subject to semiconductor system manufacturing process variation. 
     
     
         17 . The method of  claim 15 , further comprising receiving output from the plurality of sensors, the output comprising a sensor age of each of the plurality of sensors due to the aging process. 
     
     
         18 . The method of  claim 15 , further comprising:
 selecting each of the plurality of sensors to have an independent optimal sensitivity based on its location; and   positioning each of the plurality of sensors at the corresponding location.   
     
     
         19 . The method of  claim 18 , further comprising determining the optimal sensitivity according to sensing range and timing. 
     
     
         20 . The method of  claim 18 , the plurality of sensors being selected from a group consisting of: aging-resistant devices and aging-sensitive devices.