A method of polishing a substrate having a film on a surface of the substrate for semiconductor manufacturing

Abstract

A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate.

1 - 10 . (canceled) 
     
     
         11 . A method of polishing a substrate having a film, the method comprising:
 performing a polishing process of the substrate in a polishing section while monitoring polishing of the film with a sensor,   terminating the polishing process after an output of the sensor meets a predetermined condition,   transporting the polished substrate to a film thickness measuring device prior to cleaning and drying of the substrate,   measuring the thickness of the film by the film thickness measuring device,   comparing the thickness with a target value, and   performing re-polishing of the substrate in the polishing section until the thickness of the film reaches the target value prior to cleaning and drying of the substrate.   
     
     
         12 . The method according to  claim 11 , further comprising:
 calculating an additional polishing time that is necessary for the thickness to reach the target value,   wherein the re-polishing process is a process of re-polishing the substrate for the additional polishing time in the polishing section prior to cleaning and drying of the substrate.   
     
     
         13 . The method according to  claim 11 , further comprising:
 terminating the polishing process before the output of the sensor meets a predetermined condition.   
     
     
         14 . The method according to  claim 11 , wherein:
 the polishing process comprises a process of bringing the substrate into sliding contact with a polishing pad attached to a polishing table, while supplying a polishing liquid onto the polishing pad; and   the re-polishing process comprises a process of bringing the substrate into sliding contact with the polishing pad attached to the same polishing table, while supplying a polishing liquid onto the polishing pad.   
     
     
         15 . The method according to  claim 11 , wherein:
 the polishing process comprises a process of bringing the substrate into sliding contact with a polishing pad attached to a polishing table, while supplying a polishing liquid onto the polishing pad; and   the re-polishing process comprises a process of bringing the substrate into sliding contact with a different polishing pad attached to a different polishing table, while supplying a polishing liquid onto the different polishing pad.   
     
     
         16 . The method according to  claim 11 , further comprising:
 after the output of the sensor meets a predetermined condition, cleaning and drying the substrate.   
     
     
         17 . The method according to  claim 11 , further comprising:
 spraying a liquid onto a subsequent substrate when performing the re-polishing process and/or measuring the thickness of the film.   
     
     
         18 . The method according to  claim 11 , further comprising:
 calculating a delay in a polishing start time of a subsequent substrate, the delay being due to the re-polishing process; and   adjusting a timing of starting polishing of the subsequent substrate.   
     
     
         19 . A method of polishing a substrate having a film, the method comprising:
 polishing the substrate while monitoring polishing of the film with a sensor,   terminating polishing of the substrate when an output of the sensor meets a predetermined condition,   transporting the polished substrate to a wet-type thickness measuring device,   measuring a thickness of the film by the wet-type film thickness measuring device,   calibrating the sensor based on the output of the sensor and an out put of the wet-type thickness measuring device,   polishing a subsequent substrate while monitoring polishing of the subsequent substrate with the calibrated sensor, and   terminating polishing of the subsequent substrate when an output of the sensor meets the predetermined condition.   
     
     
         20 . The method according to  claim 19 , further comprising:
 terminating the polishing process before the output of the sensor meets the predetermined condition.   
     
     
         21 . The method according to  claim 19 , wherein:
 the polishing process comprises a process of bringing the substrate into sliding contact with a polishing pad attached to a polishing table, while supplying a polishing liquid onto the polishing pad.   
     
     
         22 . The method according to  claim 19 , further comprising:
 after the output of the sensor meets a predetermined condition, cleaning and drying the substrate.   
     
     
         23 . A method of polishing a substrate having a film, said method comprising:
 performing polishing of the substrate in a polishing section,   transporting the polished substrate, with its surface wet, to a wet-type film thickness measuring device,   measuring a thickness of the film by the wet-type film thickness measuring device,   comparing the thickness with a target value,   when the thickness has not reached the target value, performing a re-polishing process of the substrate in the polishing section prior to cleaning and drying of the substrate,   calculating a delay in a polishing start time of a subsequent substrate, the delay being due to the re-polishing process, and   adjusting a timing of starting polishing of the subsequent substrate.   
     
     
         24 . The method according to  claim 23 , further comprising:
 calculating an additional polishing time that is necessary for the thickness to reach the target value,   wherein the re-polishing process is a process of re-polishing the substrate for the additional polishing time in the polishing section prior to cleaning and drying of the substrate.   
     
     
         25 . The method according to  claim 23 , wherein
 the polishing process is performed while monitoring polishing of the film with a sensor,   the method further comprising:   terminating the polishing process before the output of the sensor meets a predetermined condition.   
     
     
         26 . The method according to  claim 23 , wherein:
 the polishing process comprises a process of bringing the substrate into sliding contact with a polishing pad attached to a polishing table, while supplying a polishing liquid onto the polishing pad; and   the re-polishing process comprises a process of bringing the substrate into sliding contact with the polishing pad attached to the same polishing table, while supplying a polishing liquid onto the polishing pad.   
     
     
         27 . The method according to  claim 23 , wherein:
 the polishing process comprises a process of bringing the substrate into sliding contact with a polishing pad attached to a polishing table, while supplying a polishing liquid onto the polishing pad; and   the re-polishing process comprises a process of bringing the substrate into sliding contact with a different polishing pad attached to a different polishing table, while supplying a polishing liquid onto the different polishing pad.   
     
     
         28 . The method according to  claim 23 , wherein
 the polishing process is performed while monitoring polishing of the film with a sensor,   the method further comprising:   after the output of the sensor meets a predetermined condition, cleaning and drying the substrate.   
     
     
         29 . The method according to  claim 23 , further comprising:
 spraying a liquid onto a subsequent substrate when performing the re-polishing process and/or measuring the thickness of the film.