US2015108505A1PendingUtilityA1

Diamond Semiconductor System and Method

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Assignee: Adam khanPriority: Jul 30, 2011Filed: Dec 23, 2014Published: Apr 23, 2015
Est. expiryJul 30, 2031(~5 yrs left)· nominal 20-yr term from priority
Inventors:Khan Adam
H10P 32/00H10P 30/2044H10D 62/8303H10D 8/045H10D 8/50H10D 8/051H01L 29/1602H01L 21/22H01L 21/0405H10P 30/21H10P 30/28H10P 30/221H10P 30/22H10P 30/222
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Claims

Abstract

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.

Claims

exact text as granted — not AI-modified
1 . (canceled) 
     
     
         2 . (canceled) 
     
     
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         4 . (canceled) 
     
     
         5 . A method of fabricating diamond semiconductors, the method including the steps of:
 selecting a diamond material having a diamond lattice;   introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks;   introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and   annealing the diamond lattice;   wherein the introduction of the minimal amount of acceptor dopant atoms does not create a critical density of vacancies, and the introduction of the minimal amount of acceptor dopant atoms diminishes the resistive pressure capability of the diamond lattice.   
     
     
         6 . The method of  claim 5 , wherein the diamond material is intrinsic diamond. 
     
     
         7 . The method of  claim 5 , wherein the acceptor dopant atoms are introduced at 293 to 298 degrees Kelvin. 
     
     
         8 . The method of  claim 5 , wherein the acceptor dopant atoms are boron. 
     
     
         9 . The method of  claim 5 , wherein the minimal amount of acceptor dopant atoms is between 5×108/cm2 and 5×1010/cm2. 
     
     
         10 . The method of  claim 5 , wherein the substitutional dopant atoms are introduced at or below 78 degrees Kelvin. 
     
     
         11 . The method of  claim 5 , wherein the substitutional dopant atoms are introduced at less than 500 keV. 
     
     
         12 . The method of  claim 5 , wherein the substitutional dopant atoms are introduced at less than 140 keV and at a 6 degree offset. 
     
     
         13 . The method of  claim 5 , wherein the substitutional dopant atoms are phosphorus. 
     
     
         14 . The method of  claim 5 , wherein the substitutional dopant atoms are introduced at a concentration greater than 9×1017/cm3. 
     
     
         15 . The method of  claim 5 , wherein the annealing takes place at or above 1000 degrees Celsius. 
     
     
         16 . A semiconductor fabricated according to the method of  claim 5 .

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