Semiconductor light emitting device and manufacturing method of the same

Abstract

According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.

1 - 20 . (canceled) 
     
     
         21 . A semiconductor light emitting device comprising:
 a semiconductor layer having a first face having concavities and convexities, a second face opposite to the first face, and a light emitting layer;   a p-side electrode provided on the semiconductor layer;   an n-side electrode provided on the semiconductor layer;   a film provided in an upper end of a convex portion of the concavities and convexities of the first face, not provided in a concave portion of the concavities and convexities of the first face, the film being different in a refraction index from the semiconductor layer; and   a resin layer provided on the first face side.   
     
     
         22 . The device according to  claim 21 , further comprising:
 a first insulating film provided on the p-side electrode and the n-side electrode, and having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode;   a p-side interconnection portion provided on the first insulating film, and electrically connected to the p-side electrode through the first opening; and   an n-side interconnection portion provided on the first insulating film, and electrically connected to the n-side electrode through the second opening.   
     
     
         23 . The device according to  claim 22 , wherein the first insulating film covers a side face that extends from the first face of the first nitride semiconductor layer. 
     
     
         24 . The device according to  claim 22 , further comprising a second insulating film provided between the p-side interconnection portion and the n-side interconnection portion. 
     
     
         25 . The device according to  claim 24 , wherein the second insulating film covers a periphery of the p-side interconnection portion and a periphery of the n-side interconnection portion. 
     
     
         26 . The device according to  claim 22 , wherein
 the p-side interconnection portion includes   a p-side interconnection layer provided inside the first opening and on the first insulating film; and   a p-side metal pillar provided on the p-side interconnection layer and being thicker than the p-side interconnection layer, and   the n-side interconnection portion includes   an n-side interconnection layer provided inside the second opening and on the first insulating film; and   an n-side metal pillar provided on the n-side interconnection layer and being thicker than the n-side interconnection layer.   
     
     
         27 . The device according to  claim 21 , wherein
 the film is a buffer layer.   
     
     
         28 . The device according to  claim 27 , wherein
 the semiconductor layer is a crystal growth layer on a substrate, and   the buffer layer reduces a lattice unconformity.   
     
     
         29 . The device according to  claim 21 , wherein
 the film includes an AlN film.   
     
     
         30 . The device according to  claim 21 , wherein
 the film contains silicon.   
     
     
         31 . The device according to  claim 30 , wherein
 the film containing silicon includes at least one of a SiN film and a SiON film.   
     
     
         32 . The device according to  claim 30 , wherein
 the film containing silicon includes at least one of a SiOC film and a SiC film.   
     
     
         33 . The device according to  claim 21 , wherein
 the first face has a plurality of films thereon, and   lower ends of the films are at a same level.   
     
     
         34 . The device according to  claim 21 , wherein
 the surfaces of the concavities and convexities have the same plane orientation.   
     
     
         35 . The device according to  claim 34 , wherein
 the concavities and convexities are crystalline-anisotropic-etched portions.