Light-emitting device having light-emitting elements

Abstract

A light-emitting device including a substrate, a first electrode pad and a second electrode pad disposed on the substrate and spaced apart each other, and at least two arrays connected in parallel between the first and the second electrode pads. The at least two arrays include a first array and a second array, each of the at least two arrays include GaN-based light-emitting elements connected in series, the first electrode pad and the second electrode pad are disposed on a non-light-emitting first region of the substrate spaced apart from a light-emitting second region of the substrate, and the first electrode pad and the second electrode pad surround at least a portion of outer edges comprising a circumference of the at least two arrays.

What is claimed is: 
     
         1 . A light-emitting device, comprising:
 a substrate;   a first electrode pad and a second electrode pad disposed on the substrate and spaced apart each other; and   at least two arrays connected in parallel between the first and the second electrode pads;   wherein:   the at least two arrays comprise a first array and a second array;   each of the at least two arrays comprise GaN-based light-emitting elements connected in series;   the first electrode pad and the second electrode pad are disposed in a non-light-emitting first region spaced apart from a light-emitting second region; and   the first electrode pad and the second electrode pad surround at least a portion of outer edges comprising a circumference of the at least two arrays.   
     
     
         2 . The light-emitting device of  claim 1 , wherein each of the at least two arrays comprises at least two GaN-based light-emitting elements sharing an electrode. 
     
     
         3 . The light-emitting device of  claim 1 , wherein each GaN-based light-emitting element comprises:
 an n-type semiconductor layer;   a p-type semiconductor layer; and   an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer,   wherein each of the first and second electrode pads is electrically connected to the n-type semiconductor layer or the p-type semiconductor layer of each GaN-based light-emitting element through wiring.   
     
     
         4 . The light-emitting device of  claim 1 , wherein an overall shape of the GaN-based light emitting elements and the electrode pads together is approximately square. 
     
     
         5 . The light-emitting device of  claim 1 , wherein the GaN-based light-emitting elements are disposed in a two-dimensional pattern on the substrate. 
     
     
         6 . The light-emitting device of  claim 1 , wherein the first electrode pad and the second electrode pad have opposing polarities. 
     
     
         7 . The light-emitting device of  claim 1 , wherein the GaN-based light-emitting elements are disposed in a zigzag pattern in the first array. 
     
     
         8 . The light-emitting device of  claim 1 , wherein the first electrode pad and the second electrode pad diagonally face each other. 
     
     
         9 . The light-emitting device of  claim 1 , wherein the first array and the second array are symmetrically disposed on the substrate. 
     
     
         10 . The light-emitting device of  claim 1 , wherein:
 each GaN-based light-emitting element comprises a first electrode and a second electrode; and   one GaN-based light-emitting element of the first array and one GaN-based light-emitting element of the second array share the first electrode.   
     
     
         11 . The light-emitting device of  claim 1 , wherein the GaN-based light-emitting elements are disposed only in the light-emitting second region.