Method for producing ferroelectric thin film

Abstract

A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.

1 - 13 . (canceled) 
     
     
         14 . A ferroelectric thin film that has preferred crystal orientation in the (110) plane that is produced by a method comprising:
 coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction,   performing calcination of the coated composition, and subsequently performing filing of the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode,   wherein the method includes performing formation of an orientation controlling layer by a process including coating the composition for forming a ferroelectric thin film on the base electrode, performing calcination of the coated composition, and performing firing of the coated composition,   where an amount of the composition for forming a ferroelectric thin film coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferred crystal orientation of the orientation controlling layer to be in the (110) plane.   
     
     
         15 . A composite electronic part of a device selected from a thin-film capacitor, a capacitor, an IPD, a condenser for a DRAM memory, a stacked capacitor, a gate insulator of a transistor, a non-volatile memory, a pyloelectric infrared sensor, a piezoelectric element, an electro-optic element, an actuator, a resonator, an ultrasonic motor, and a LC noise filer, wherein the composite electronic part includes a ferroelectric thin film according to  claim 14 . 
     
     
         16 . The ferroelectric thin film according to  claim 14 , wherein the method further comprises forming a crystal diameter controlling layer on the base electrode before forming the orientation controlling layer, wherein the orientation controlling layer is formed on the crystal diameter controlling layer and the crystal diameter of the orientation controlling layer is equal to the crystal diameter of the crystal diameter controlling layer as a result.