Semiconductor device and method for manufacturing the device

Abstract

A semiconductor device includes a N-type field effect transistor comprising a N-channel region in a substrate. A high dielectric constant (high-k) layer is disposed on the N-channel region. A diffusion layer including a metal oxide is disposed on the high-k layer. A passivation layer is disposed on the diffusion layer, and a first metal gate is disposed on the passivation layer. The first high-k layer and the N-channel region include metal atoms of a metal element of the metal oxide.

What is claimed is: 
     
         1 . A static random access memory (SRAM) device comprising: a N-type field effect transistor comprising: a high dielectric constant (high-k) layer disposed on a substrate, a diffusion layer including a metal oxide disposed on the high-k layer, a passivation layer disposed on the diffusion layer, and a first metal gate disposed on the passivation layer; and a P-type field effect transistor comprising: the high-k layer disposed on the substrate. 
     
     
         2 . The SRAM device of  claim 1 , wherein the P-type field effect transistor further comprising; a diffusion barrier layer formed on the second high-k layer; the diffusion layer disposed on the diffusion barrier layer; the passivation layer disposed on the diffusion layer; and a second metal gate disposed on the passivation layer, wherein the diffusion barrier layer prevents metal atoms of the diffusion layer from being diffused into the high-k layer. 
     
     
         3 . The SRAM device of  claim 1 , wherein the first metal gate includes a first plurality of conductive layers and the second metal gate includes a second plurality of conductive layers, wherein first plurality of conductive layers include a conductive layer different from that of the second plurality of conductive layers. 
     
     
         4 . The SRAM device of  claim 1 , wherein the N-type field effect transistor and the P-type field effect transistor is configured to be a fin-type transistor.