Dielectric composition and multilater ceramic electronic component manufactured using the same

Abstract

There are provided a dielectric composition and a multilayer ceramic electronic component manufactured using the same, the dielectric composition including a dielectric grain having a perovskite structure represented by ABO 3 , wherein, when an imaginary line is drawn in a direction from a center of the dielectric grain to a grain boundary thereof, a content of rare earth elements in a region corresponding to 0.75 to 0.95% of the dielectric grain from the center of the dielectric grain may be 0.5 to 2.5 at %, based on 100 at % of a B-site ion, so that the multilayer ceramic electronic component manufactured using the dielectric composition can have excellent reliability and secure a high dielectric constant.

What is claimed is: 
     
         1 . A dielectric composition, comprising a dielectric grain having a perovskite structure represented by ABO 3 , wherein, when an imaginary line is drawn in a direction from a center of the dielectric grain to a grain boundary thereof, a content of rare earth elements in the center of the dielectric grain is 0.05 to 2.0 at %, and a content of rare earth elements in the region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.5 to 2.0 times that of the content of rare earth elements in the center of the dielectric grain. 
     
     
         2 . The dielectric composition of  claim 1 , wherein the A includes one or more selected from a group consisting of barium (Ba), strontium (Sr), lead (Pb), and calcium (Ca). 
     
     
         3 . The dielectric composition of  claim 1 , wherein the B includes one or more selected from a group consisting of titanium (Ti) and zirconium (Zr). 
     
     
         4 . The dielectric composition of  claim 1 , wherein the rare earth elements include a trivalent ion. 
     
     
         5 . The dielectric composition of  claim 1 , wherein the rare earth elements include one or more selected from a group consisting of scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and ruthenium (Ru). 
     
     
         6 . The dielectric composition of  claim 1 , wherein the dielectric grain includes one or more selected from a group consisting of Ba m TiO 3 (0.995≦m≦1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O 3 (0.995≦m≦1.010, 0≦x≦0.10, 0<y≦0.20), and Ba m (Ti 1-x Zr x )O 3 (0.995≦m≦1.010, x≦0.10); and Ba m TiO 3 (0.995≦m≦1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O 3 (0.995≦m≦1.010, 0≦x≦0.10, 0<y≦0.20), and Ba m (Ti 1-x Zr x )O 3  (0.995≦m≦1.010, x≦0.10), in which one or more rare earth elements are partially dissolved. 
     
     
         7 . A multilayer ceramic electronic component, comprising:
 a ceramic body including dielectric layers each having an average thickness of 0.48 μm or less; and   internal electrodes disposed to face each other with the dielectric layer therebetween within the ceramic body,   wherein the dielectric layer includes a dielectric composition, the dielectric composition including a dielectric grain having a perovskite structure represented by ABO 3 , in which, when an imaginary line is drawn in a direction from a center of the dielectric grain to a grain boundary thereof, a content of rare earth elements in the center of the dielectric grain is 0.05 to 2.0 at %, and a content of rare earth elements in the region corresponding to 75 to 95% of the dielectric grain from the center of the dielectric grain is 0.5 to 2.0 times that of the content of rare earth elements in the center of the dielectric grain.   
     
     
         8 . The multilayer ceramic electronic component of  claim 7 , the A includes one or more selected from a group consisting of barium (Ba), strontium (Sr), lead (Pb), and calcium (Ca). 
     
     
         9 . The multilayer ceramic electronic component of  claim 7 , wherein the B includes one or more selected from a group consisting of titanium (Ti) and zirconium (Zr). 
     
     
         10 . The multilayer ceramic electronic component of  claim 7 , wherein the rare earth elements include a trivalent ion. 
     
     
         11 . The multilayer ceramic electronic component of  claim 7 , wherein the rare earth elements include one or more selected from a group consisting of scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Cd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and ruthenium (Ru). 
     
     
         12 . The multilayer ceramic electronic component of  claim 7 , wherein the dielectric grain includes one or more selected from a group consisting of Ba m TiO 3 (0.995≦m≦1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O 3 (0.995≦m≦1.010, 0≦x≦0.10, 0<y≦0.20), and Ba m (Ti 1-x Zr x )O 3 (0.995≦m≦1.010, x≦0.10); and Ba m TiO 3 (0.995≦m≦1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O 3 (0.995≦m≦1.010, 0≦x≦0.10, 0<y≦0.20), and Ba m (Ti 1-x Zr x )O 3  (0.995≦m≦1.010, x≦0.10), in which one or more rare earth elements are partially dissolved. 
     
     
         13 . The multilayer ceramic electronic component of  claim 7 , wherein the dielectric layer has a dielectric constant of 4000 or greater.