Integrated Device Including Silicon and III-Nitride Semiconductor Devices

Abstract

A semiconductor device that includes one semiconductor device formed in one semiconductor material and a second semiconductor device formed in another semiconductor material on a common substrate, and a method of fabricating the semiconductor device.

1 - 22 . (canceled) 
     
     
         23 . An integrated device comprising:
 a common substrate;   a first semiconductor device formed over a first surface of said substrate;   a second semiconductor device formed over said first surface and disposed lateral to said first semiconductor device;   said first semiconductor device comprising a first semiconductor material, and said second semiconductor device comprising a second semiconductor material having a higher band gap than said first semiconductor material.   
     
     
         24 . The integrated device of  claim 23 , wherein said first semiconductor material comprises silicon and said second semiconductor material comprises a III-Nitride material. 
     
     
         25 . The integrated device of  claim 23 , wherein said first semiconductor device comprises a control IC. 
     
     
         26 . The integrated device of  claim 23 , wherein said second semiconductor device comprises a power switching device. 
     
     
         27 . The integrated device of  claim 23  further comprising an insulation wall disposed between said first semiconductor device and said second semiconductor device. 
     
     
         28 . The integrated device of  claim 23  further comprising an interlayer disposed between said second semiconductor device and said common substrate. 
     
     
         29 . The integrated device of  claim 27 , wherein said insulation wall comprises of silicon dioxide. 
     
     
         30 . The integrated device of  claim 28 , wherein said interlayer comprises a compositionally graded III-Nitride material. 
     
     
         31 . The integrated device of  claim 23 , wherein said first semiconductor device comprises <100> silicon. 
     
     
         32 . The integrated device of  claim 23 , wherein said first semiconductor device comprises <100> silicon and said common substrate comprises <100> silicon. 
     
     
         33 . The integrated device of  claim 23 , wherein said second semiconductor material comprises a III-N material that is formed on <111> silicon residing on a silicon dioxide interlayer lying on said common substrate. 
     
     
         34 . The integrated device of  claim 23 , wherein said second semiconductor device comprises an alloy of InAlGaN. 
     
     
         35 . The integrated device of  claim 23 , wherein said second semiconductor device comprises GaN. 
     
     
         36 . The integrated device of  claim 23 , wherein said second semiconductor device comprises AlGaN.