Semiconductor device, display, and method of manufacturing semiconductor device

Abstract

A semiconductor device includes: a gate electrode layer; a gate insulating film provided on the gate electrode layer; a semiconductor layer provided, in opposition to the gate electrode layer, on the gate insulating film; and a source-drain electrode layer provided on the semiconductor layer and on the gate insulating film. A face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer.

1 . A semiconductor device, comprising:
 a gate electrode layer;   a gate insulating film provided on the gate electrode layer;   a semiconductor layer provided, in opposition to the gate electrode layer, on the gate insulating film; and   a source-drain electrode layer provided on the semiconductor layer and on the gate insulating film,   wherein a face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer.   
     
     
         2 . The semiconductor device according to  claim 1 , further comprising a raised section where the semiconductor layer is provided, the raised section being provided in a region, in opposition to the gate electrode layer, on the gate insulating film. 
     
     
         3 . The semiconductor device according to  claim 2 , wherein the raised section includes a stepped section that is dug-down and provided at a drain-side section or at both of a source-side section and the drain-side section of the gate insulating film, the source-side section and the drain-side section being adjacent to the region, of the gate insulating film, in which the semiconductor layer is provided. 
     
     
         4 . The semiconductor device according to  claim 1 , further comprising an insulating film provided on the gate insulating film,
 wherein the semiconductor layer is provided in a region, in opposition to the gate electrode layer, of the insulating film, and   a drain-side section or both of a source-side section and the drain-side section of the insulating film is removed, the source-side section and the drain-side section being adjacent to the region, of the insulating film, in which the semiconductor layer is provided.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein the insulating film has a dielectric constant higher than a dielectric constant of the gate insulating film. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the gate electrode layer has a size that covers, in plan view, the semiconductor layer. 
     
     
         7 . The semiconductor device according to  claim 1 , further comprising a protecting film provided on the semiconductor layer,
 wherein the source-drain electrode layer is provided on the protecting film.   
     
     
         8 . The semiconductor device according to  claim 1 , wherein the semiconductor layer includes an organic semiconductor. 
     
     
         9 . The semiconductor device according to  claim 1 , wherein the semiconductor layer includes an oxide semiconductor. 
     
     
         10 . A display provided with a semiconductor device, the semiconductor device comprising:
 a gate electrode layer;   a gate insulating film provided on the gate electrode layer;   a semiconductor layer provided, in opposition to the gate electrode layer, on the gate insulating film; and   a source-drain electrode layer provided on the semiconductor layer and on the gate insulating film,   wherein a face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer.   
     
     
         11 . A method of manufacturing a semiconductor device, the method comprising:
 forming a gate insulating film on a gate electrode layer;   forming, in opposition to the gate electrode layer, a semiconductor layer on the gate insulating film; and   forming a source-drain electrode layer on the semiconductor layer and on the gate insulating film,   wherein a face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer.