Die Seal Layout for VFTL Dual Damascene in a Semiconductor Device

Abstract

A semiconductor may include several vias located in an active region and a die seal region. In the active region, a photoresist can be patterned with openings corresponding to the vias. In the die seal area, however, the photoresist can be patterned to overlap the vias. With this configuration, an underlayer etch will not affect an underlayer resist in the die seal area, allowing the die seal area to be disregarded for purposes of calculating a process window.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 an active area having a plurality of active elements, each of the active elements being defined by a first trench overlapping with a via, each of the active elements including a first continuous metal filling disposed in the first trench and the via; and   a die seal area defined by a second trench, a second continuous metal filling disposed in the second trench.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first trench is wider than the via. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first trench is narrower than the via. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the second trench is formed by a single exposure and etch patterning process. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the first continuous metal filling and the second continuous metal filling are deposited at substantially the same time. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the die seal area includes a plurality of second trenches. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the die seal area extends around a perimeter of the semiconductor device. 
     
     
         8 . A semiconductor device, comprising:
 an active area having a plurality of active elements, each of the plurality of active elements including:
 a via; 
 a first trench that overlaps the first via; and 
 a first continuous metal filling disposed in the first trench and the first via; and 
   a die seal area having a second trench, the die seal area including a second continuous metal filling disposed in the second trench.   
     
     
         9 . The semiconductor device of  claim 8 , further comprising an upper portion that houses the first trench and a lower portion that houses the via. 
     
     
         10 . The semiconductor device of  claim 9 , wherein the second trench is disposed in the upper portion and the lower portion. 
     
     
         11 . The semiconductor device of  claim 9 , wherein the second trench extends an entire depth of the lower portion and at least a partial depth of the upper portion. 
     
     
         12 . The semiconductor device of  claim 8 , wherein the second trench has a depth larger than a depth of the via and larger than a depth of the first trench. 
     
     
         13 . The semiconductor device of  claim 8 , wherein the die seal area includes a plurality of second trenches. 
     
     
         14 . The semiconductor device of  claim 8 , wherein the die seal area extends around a perimeter of the semiconductor device. 
     
     
         15 . A semiconductor device, comprising:
 a first area that includes:
 a via; 
 a first trench that overlaps the first via; and 
 a first continuous metal filling disposed in the first trench and the first via; and 
   a second area that includes:
 a second trench; and 
 a second continuous metal filling disposed in the second trench. 
   
     
     
         16 . The semiconductor device of  claim 15 , wherein the first trench is wider than the via. 
     
     
         17 . The semiconductor device of  claim 15 , wherein the first trench is narrower than the via. 
     
     
         18 . The semiconductor device of  claim 15 , wherein the second trench has a depth larger than a depth of the via and larger than a depth of the first trench. 
     
     
         19 . The semiconductor device of  claim 15 , wherein the second area includes a plurality of second trenches. 
     
     
         20 . The semiconductor device of  claim 15 , wherein the second area extends around a perimeter of the semiconductor device.