US2015085583A1PendingUtilityA1

Nonvolatile memory apparatus, program method thereof, and data processing system using the same

Assignee: SK HYNIX INCPriority: Feb 6, 2012Filed: Dec 1, 2014Published: Mar 26, 2015
Est. expiryFeb 6, 2032(~5.5 yrs left)· nominal 20-yr term from priority
Inventors:Chul Woo Yang
G11C 16/10G11C 16/32G11C 16/3459G11C 11/5628G11C 16/12G11C 16/0483
45
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Claims

Abstract

A nonvolatile memory apparatus includes: a memory cell area including a plurality of memory cells connected to a word line and a bit line; a program time controller configured to determine a program voltage application time for a selected word line, as the selected word line is selected in response to a program command and an address signal; and a controller configured to apply a program voltage to the selected word line according to the program voltage application time determined by the program time controller.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A program method of a nonvolatile memory apparatus, comprising the steps of:
 applying a program voltage to a selected word line, as the selected word line is selected in response to a program command and an address signal; and   applying the program voltage during a predetermined estimated time, when the level of the selected word line rises to a first voltage.   
     
     
         2 . The program method according to  claim 1 , wherein the estimated time is estimated from a slope which is measured from a time-voltage relationship when each selected word line receives the first voltage and reaches a second voltage level during a test mode. 
     
     
         3 . The program method according to  claim 2 , wherein the second voltage level is lower than the first voltage. 
     
     
         4 . The program method according to  claim 2 , wherein the estimated time comprises an estimated time which is required until the voltage level of each selected word line reaches the program voltage after reaching the first voltage. 
     
     
         5 . The program method according to  claim 1 , wherein the first voltage comprises a pass voltage. 
     
     
         6 . A data processing system comprising:
 a host; and   a nonvolatile memory apparatus connected to the host through a host interface,   wherein the nonvolatile memory apparatus determines a program voltage application time for a selected word line, as the selected word line is selected in response to a program command and an address signal, and applies a program voltage to the selected word line according to the determined program voltage application time.   
     
     
         7 . The data processing system according to  claim 6 , wherein the controller estimates a time required for each selected word line to reach the program voltage in response to a test mode signal, manages the estimated time in a reference table, and acquires an estimated time for the selected word line in response to the program command and the address signal. 
     
     
         8 . The data processing system according to  claim 6 , wherein the controller comprises:
 a reference table configured to store an estimated time which is required until the voltage level of each selected word line reaches the program voltage from a first voltage;   a bias control unit configured to check whether or not the voltage level of the selected word line reaches the first voltage; and   a timing control unit configured to acquire the estimated time of the selected word line.   
     
     
         9 . The data processing system according to  claim 8 , wherein, when the voltage level of the selected word line reaches the first voltage, the controller supplies the program voltage during the estimated time. 
     
     
         10 . The data processing system according to  claim 8 , wherein the estimated time is estimated from a slope which is measured from a time-voltage relationship when each selected word line receives the first voltage and reaches a second voltage level during a test mode. 
     
     
         11 . The data processing system according to  claim 10 , wherein the second voltage level is lower than the first voltage. 
     
     
         12 . The data processing system according to  claim 10 , wherein the estimated time comprises an estimated time which is required until the voltage level of each selected word line reaches the program voltage after reaching the first voltage. 
     
     
         13 . The data processing system according to  claim 10 , wherein the first voltage comprises a pass voltage.

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