Semiconductor device and method of manufacturing the same

Abstract

A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in contact with the dielectric film.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a semiconductor substrate;   a capacitor formed above the semiconductor substrate, and having a lower electrode, a ferroelectric film, and an upper electrode; and   a conductive oxide film provided between the ferroelectric film and the upper electrode, and having the same structure as a structure of the ferroelectric film, and containing a ferroelectric material provided with conductivity.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the conductive oxide film has a perovskite or a bismuth layered crystal structure. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the conductive oxide film contains at least one of iridium and ruthenium as a conductive material for providing the conductivity. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein a percentage content of a conductive material in the conductive oxide film is not less than 1 mol % and not more than 4 mol %. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the conductive oxide film has a film thickness of not less than 0.1 nm and not more than 50 nm. 
     
     
         6 . The semiconductor device according to  claim 1 , further comprising a conductive film formed of a conductive oxide on the conductive oxide film. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the ferroelectric film is made of the same ferroelectric material as the ferroelectric material of the conductive oxide film.