Method of manufacturing a magnetoresistive device

Abstract

A method of manufacturing a magnetoresistive-based device includes a metal hard mask that is inert to a top electrode etch chemistry and that has low sputter yield during a magnetic stack sputter. The metal hard mask is patterned by the photo resist and the photo mask is then stripped and the top electrode (overlying magnetic materials of the magnetoresistive-based device) is patterned by the metal hard mask.

What is claimed is: 
     
         1 . A method of manufacturing a magnetoresistive based device, comprising:
 providing a magnetic material layer;   depositing a metal hard mask layer on the magnetic material layer;   providing a patterned photo resist over the metal hard mask layer;   etching the metal hard mask layer not covered by the patterned photo resist to form a patterned metal hard mask;   etching the magnetic material layer not covered by the patterned metal hard mask to form a magnetic material stack; and   removing the patterned photo resist to expose the patterned metal hard mask, wherein the patterned metal hard mask is retained on the magnetic material stack for use as an electrically conductive electrode for the magnetoresistive device.   
     
     
         2 . The method of  claim 1 , wherein depositing the metal hard mask layer further comprises depositing conductive material that is resistant with respect to the etching of the magnetic material layer. 
     
     
         3 . The method of  claim 2 , wherein depositing the metal hard mask layer further comprises depositing platinum manganese (PtMn). 
     
     
         4 . The method of  claim 2 , wherein depositing the metal hard mask layer further comprises depositing iridium manganese (IrMn). 
     
     
         5 . The method of  claim 2 , wherein depositing the metal hard mask layer further comprises depositing an electrically conductive alloy that is resistant to fluorine based etch processes. 
     
     
         6 . The method of  claim 2 , wherein depositing the metal hard mask layer further comprises depositing an electrically conductive alloy that is resistant to chlorine based etch processes. 
     
     
         7 . The method of  claim 2 , wherein the patterned metal hard mask is employed to pattern the magnetic material stack and has a selectivity in connection with the etching of the magnetic material layer to form that magnetic stack that is greater than or equal to 10:1. 
     
     
         8 . The method of  claim 2 , wherein the patterned metal hard mask is employed to pattern the magnetic material stack and has a selectivity in connection with the etching of the magnetic material layer to form that magnetic stack that is greater than or equal to 20:1. 
     
     
         9 . The method of  claim 2 , wherein depositing the metal hard mask layer further comprises depositing an electrically conductive alloy having a thickness within a range of 15-150 Angstroms. 
     
     
         10 . The method of  claim 2 , wherein depositing the metal hard mask layer further comprises depositing an electrically conductive alloy having a thickness within a range of 20-100 Angstroms. 
     
     
         11 . The method of  claim 10 , wherein the electrically conductive alloy further comprises at least one of platinum manganese (PtMn) and iridium manganese (IrMn). 
     
     
         12 . The method of  claim 2 , wherein the metal hard mask consists essentially of one material. 
     
     
         13 . The method of  claim 12 , wherein the one material is one of platinum manganese (PtMn) and iridium manganese (IrMn). 
     
     
         14 . A method of manufacturing a magnetoresistive based device, comprising:
 providing a magnetic material layer;   depositing a metal hard mask layer on the magnetic material layer, wherein the metal hard mask layer consists essentially of one material that is resistant with respect to a first etching process;   providing a patterned photo resist over the metal hard mask layer;   etching, using a second etching process, the metal hard mask layer not covered by the patterned photo resist to form a patterned metal hard mask;   etching, using the first etching process, the magnetic material layer not covered by the patterned metal hard mask to form a magnetic material stack; and   removing the patterned photo resist to expose the patterned metal hard mask, wherein the patterned metal hard mask is retained on the magnetic material stack for use as an electrically conductive electrode for the magnetoresistive device.   
     
     
         15 . The method of  claim 14 , wherein the metal hard mask layer consists essentially of an electrically conductive alloy. 
     
     
         16 . The method of  claim 15 , wherein the metal hard mask layer consists essentially of one of platinum manganese (PtMn) and iridium manganese (IrMn). 
     
     
         17 . The method of  claim 14 , wherein the first etching process selectivity etches the magnetic material layer in comparison to the patterned metal hard mask, wherein the selectivity is greater than or equal to 10:1. 
     
     
         18 . The method of  claim 14 , wherein depositing the metal hard mask layer consists essentially of depositing an electrically conductive alloy having a thickness within a range of 15-150 Angstroms. 
     
     
         19 . A method of manufacturing a magnetoresistive based device, comprising:
 providing a magnetic material layer;   depositing a metal hard mask layer on the magnetic material layer, wherein the metal hard mask layer consists essentially of an electrically conductive alloy that is resistant with respect to a first etching process;   providing a patterned photo resist over the metal hard mask layer;   etching, using a second etching process, the metal hard mask layer not covered by the patterned photo resist to form a patterned metal hard mask;   etching, using the first etching process, the magnetic material layer not covered by the patterned metal hard mask to form a magnetic material stack, wherein the first etching process selectivity etches the magnetic material layer in comparison to the patterned metal hard mask, wherein the selectivity is greater than or equal to 10:1; and   removing the patterned photo resist to expose the patterned metal hard mask, wherein the patterned metal hard mask is retained on the magnetic material stack for use as an electrically conductive electrode for the magnetoresistive device.   
     
     
         20 . The method of  claim 15 , wherein the metal hard mask layer consists essentially of one of platinum manganese (PtMn) and iridium manganese (IrMn), wherein the metal hard mask layer has a thickness with a range of 15-150 Angstroms.