US2015076481A1PendingUtilityA1

Display device and method for manufacturing display device

Assignee: SONY CORPPriority: Jul 27, 2005Filed: Nov 20, 2014Published: Mar 19, 2015
Est. expiryJul 27, 2025(expired)· nominal 20-yr term from priority
Inventors:Toshiaki Arai
H10P 14/3816H10D 86/0251H10D 86/0229H10D 86/0223H01L 2227/323H01L 27/3262H01L 27/1274H01L 21/02686H05B 33/02G09G 2300/0426H05B 33/10G09G 5/10G09G 3/30H10K 59/1201H10K 59/1213
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Claims

Abstract

A display device and method for manufacturing same are provided. The display device including a plurality of unit pixels disposed in the matrix on a substrate, each of the unit pixels has a thin film transistor at a place other than the center of the pixel, and unit pixels in a first row and unit pixels in a second row adjacent to the first row are arranged so that they are symmetric with respect to a first virtual plane orthogonal to a main surface of the substrate.

Claims

exact text as granted — not AI-modified
The invention is claimed as follows: 
     
         1 . A display device comprising a plurality of unit pixels provided with an organic EL element and a plurality of thin film transistors and disposed in the two-dimensional matrix on a substrate,
 wherein a first unit pixel and a second unit pixel in two rows adjacent to each other are disposed in arrangement forms symmetric with respect to the boundary between the rows,   in each of the two rows, the individual unit pixels are disposed in the same arrangement form in the row direction, and   the thin film transistors of the unit pixels in the two rows have channel regions formed from thin film semiconductor layers crystallized by irradiation with pulse lasers having a major axis width over the unit pixels in the two rows.   
     
     
         2 . A method for manufacturing a display device including a plurality of unit pixels provided with an organic EL element and a plurality of thin film transistors and disposed in the two-dimensional matrix on a substrate, the method comprising the steps of:
 forming a first unit pixel and a second unit pixel in two rows adjacent to each other into arrangement forms symmetric with respect to the boundary between the rows,   forming the individual unit pixels into the same arrangement form in the row direction in each of the two rows, and   forming channel regions from thin film semiconductor layers crystallized by irradiation with pulse lasers having a major axis width over the unit pixels in the two rows in the thin film transistors of the unit pixels in the two rows.

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