Semiconductor device and method of inspecting the same

Abstract

According to one embodiment, a semiconductor device includes a wiring board that has a first surface and a second surface opposed to the first surface, a semiconductor chip provided on the first surface, external connection terminals provided on the second surface, a sealing resin layer provided on the first surface, and a conductive shield layer that covers at least a portion of a side surface of the wiring board and the sealing resin layer. The wiring board includes a first ground wire that is electrically connected to the conductive shield layer, and a second ground wire that is electrically connected to the conductive shield layer and is electrically insulated from the first ground wire.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a wiring board having a first surface and a second surface;   a semiconductor chip provided on the first surface;   external connection terminals provided on the second surface;   a sealing resin layer provided on the first surface; and   a conductive shield layer covering at least a portion of a side surface of the wiring board and the sealing resin layer, wherein   the wiring board includes
 a first ground wire electrically connected to the conductive shield layer, and 
 a second ground wire electrically connected to the conductive shield layer and electrically insulated from the first ground wire other than through the conductive shield layer, and 
   the external connection terminals include
 a first ground terminal electrically connected to the first ground wire, and 
 a second ground terminal electrically connected to the second ground wire. 
   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 the wiring board further includes
 an insulating layer provided between the first surface and the second surface, and 
 vias extending through the insulating layer wherein a via is electrically connected to at least one of the first ground wire or the second ground wire. 
   
     
     
         3 . The semiconductor device according to  claim 2 , wherein
 at least one of the first ground wire or the second ground wire extend to a side surface of the wiring board; and   the conductive shield extends at least partially over the side surface of the wiring board and to a location to contact the first or second ground wire at the side surface of the wiring board.   
     
     
         4 . The semiconductor device according to  claim 2 , wherein
 the first ground wire and the second ground wire are exposed at a side surface of the wiring board; and   the conductive shield extends at least partially over the side surface of the wiring board and into contact with the first and second ground wires at the side surface of the wiring board.   
     
     
         5 . The semiconductor device according to  claim 2 , wherein at least one of the first ground wire and the second ground wire are electrically connected, through a via, to a conductive wire on the second surface of the wiring board. 
     
     
         6 . The semiconductor device according to  claim 5 , wherein
 the ground wire among the first and second ground wires connected through the via to the conductive wire on the second surface of the wiring board extends to the side surface of the wiring board;   the conductive shield layer extends over the side surface of the wiring board; and   the ground wire among the first and second ground wires connected through the via to the conductive wire on the second surface of the wiring board is in electrical contact with a portion of the conductive shield layer extending at least partially over the side surface of the wiring board.   
     
     
         7 . The semiconductor device according to  claim 2 , wherein
 at least one of the vias is exposed to a side surface of the wiring board;   the conductive shield layer extends over the side surface of the wiring board; and   the via exposed at the side surface of the wiring board is in contact with the conductive shield layer.   
     
     
         8 . The semiconductor device according to  claim 1 , further comprising:
 bonding wires extending in electrical connection between the wiring board and the first ground wire or the second ground wire,   wherein the bonding wires are exposed at a surface of the sealing resin layer, and come into contact with the conductive shield layer at the location of exposure thereof at a surface of the sealing resin layer.   
     
     
         9 . The semiconductor device according to  claim 1 , further comprising:
 bonding wires extending in electrical connection between the semiconductor chip and the first ground wire or the second ground wire,   wherein the bonding wires are exposed at a surface of the sealing resin layer, and come into contact with the conductive shield layer at the location of exposure thereof at a surface of the sealing resin layer.   
     
     
         10 . The semiconductor device according to  claim 1 , wherein
 at least one of the first ground wire and the second ground wire includes a solid film or a mesh film overlapping with at least a portion of the location of the semiconductor chip on the wiring board.   
     
     
         11 . A packaged semiconductor device, comprising:
 a wiring board having a first surface, a second, opposed surface, a perimeter and a plurality of vias extending therethrough from the first surface to the second surface;   a semiconductor chip disposed on the first surface of the wiring board;   a first ground wire and a second ground wire disposed on the first surface and extending to the perimeter of the wiring board; and   a conductive shield disposed over the first side of the wiring board and the semiconductor chip, the conductive shield further extending over at least a portion of the perimeter of the wiring board and into electrical contact with the portions of the first ground wire and second ground wire at the perimeter of the wiring board.   
     
     
         12 . The packaged semiconductor device of  claim 11 , further comprising:
 a first back surface wire provided on the second surface and electrically connected to the first ground wire;   a second back surface wire provided on the second surface and electrically connected to the second ground wire;   the first back surface wire connected to a wiring terminal on the second surface of the wiring board and the second back surface wire connected to a wiring terminal on the second surface of the wiring board.   
     
     
         13 . The packaged semiconductor device of  claim 11 , further comprising a sealing resin overlying the semiconductor chip and disposed intermediate of the semiconductor chip and the conductive shield layer. 
     
     
         14 . The packaged semiconductor device of  claim 11 , wherein the conductive shield layer has a sheet resistance equal to or less than 0.5Ω. 
     
     
         15 . The packaged semiconductor device of  claim 14 , wherein the first ground wire layer extends along the perimeter of the wiring board and contacts the conductive shield layer at more than one discrete location thereof. 
     
     
         16 . The packaged semiconductor device of  claim 15 , wherein the second ground wire contacts the conductive shield layer at only one location thereof. 
     
     
         17 . The packaged semiconductor of  claim 16 , wherein the perimeter of the wiring board is rectangular, and the first ground wire extends along all four of the rectangular sides of the wiring board, and the second ground wire extends to a single side of the perimeter of the wiring board, adjacent to, but spaced, from, the first ground wire. 
     
     
         18 . The packaged semiconductor device of  claim 11 , wherein the wiring board includes a first, and a second, conductive layer interposed between, and isolated from, the first surface and the second surface of the wiring board. 
     
     
         19 . A method of inspecting a semiconductor device comprising:
 providing a first ground wire on a first surface of a wiring board and electrically connected to a conductive shield layer of a semiconductor device;   providing a second ground wire on a first surface of a wiring board and electrically connected to a conductive shield layer of a semiconductor;   electrically connecting the first ground wire to a first ground terminal on a second side of the wiring board and electrically connecting the second ground wire to a second ground terminal on a second side of the wiring board;   measuring a resistance value between the first ground terminal and the second ground terminal of the semiconductor device; and   determining the connection state of the first ground wire and the second ground wire with the conductive shield layer based on a measured resistance value.   
     
     
         20 . The method of  claim 19 , further comprising:
 extending the first ground wire to a side of the wiring board at a first location of the wiring board;   extending the second ground wire to a side of the wiring board at a second location of the wiring board; and   extending the conductive shield layer over at least a portion of the side of the wiring.