Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device includes: forming a first electrode on a first semiconductor substrate; coating the semiconductor substrate with an insulating material having a first viscosity at a first temperature, having a second viscosity lower than the first viscosity at a second temperature higher than the first temperature, and having a third viscosity higher than the second viscosity at a third temperature higher than the second temperature; and forming a first insulating film by curing the insulating material. In this method, the forming the first insulating film includes: bringing the insulating material to the second viscosity by heating the insulating material under a first condition; and bringing the insulating material to the third viscosity by heating the insulating material under a second condition. The first condition and the second condition are different in their temperature rising rate.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a first semiconductor substrate;   a first electrode including a first portion protruding from a main surface of the first semiconductor substrate; and   a first insulating film formed on a side surface of the first portion and on the main surface, the longer a distance from the first portion is, the thinner a thickness of the first insulating film is in a portion of the first insulating film on the main surface.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 the semiconductor device comprises a plurality of the first electrodes, and   the portion of the first insulating film includes one of the plurality of first electrodes thereinside.   
     
     
         3 . The semiconductor device according to  claim 1 , wherein
 in the portion of the first insulating film, an upper surface of the first insulating film is inclined with respect to the main surface.   
     
     
         4 . The semiconductor device according to  claim 3 , wherein
 in the portion of the first insulating film,   the longer the distance from the first portion is, the thinner the thickness of the first insulating film continuously is.   
     
     
         5 . The semiconductor device according to  claim 1 , wherein
 the first insulating film has a first thickness on the main surface and has a second thickness on an upper surface of the first portion, the second thickness being thinner than the first thickness.   
     
     
         6 . The semiconductor device according to  claim 1 , wherein
 the first insulating film is formed by a coating method.   
     
     
         7 . The semiconductor device according to  claim 1 , wherein
 the first insulating film contains an insulating material having undergone a cross-linking reaction.   
     
     
         8 . The semiconductor device according to  claim 1 , further comprising:
 a second semiconductor substrate; and   a second electrode formed on the second semiconductor substrate, wherein   the first electrode and the second electrode are joined to each other.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein
 the first semiconductor substrate and the second semiconductor substrate face each other, and   a second insulating film is formed between the first semiconductor substrate and the second semiconductor substrate.