US2015069241A1PendingUtilityA1

Multi-Spectral Defect Inspection for 3D Wafers

Assignee: KLA TENCOR CORPPriority: Nov 21, 2012Filed: Nov 15, 2014Published: Mar 12, 2015
Est. expiryNov 21, 2032(~6.3 yrs left)· nominal 20-yr term from priority
Inventors:Steven R. Lange
G01N 21/9501G01N 21/55G01N 2201/105G01N 2201/0612G01N 21/359G01N 21/3563G01N 21/9503
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Claims

Abstract

Multi-spectral defect inspection for 3D wafers is provided. One system configured to detect defects in one or more structures formed on a wafer includes an illumination subsystem configured to direct light in discrete spectral bands to the one or more structures formed on the wafer. At least some of the discrete spectral bands are in the near infrared (NIR) wavelength range. Each of the discrete spectral bands has a bandpass that is less than 100 nm. The system also includes a detection subsystem configured to generate output responsive to light in the discrete spectral bands reflected from the one or more structures. In addition, the system includes a computer subsystem configured to detect defects in the one or more structures on the wafer using the output.

Claims

exact text as granted — not AI-modified
What is claimed: 
     
         1 . A system configured to detect defects in one or more structures formed on a wafer, comprising:
 an illumination subsystem configured to direct light in discrete spectral bands to the one or more structures formed on the wafer, wherein at least some of the discrete spectral bands are in the near infrared wavelength range, and wherein each of the discrete spectral bands has a bandpass that is less than 100 nm;   a detection subsystem configured to generate output responsive to light in the discrete spectral bands reflected from the one or more structures; and   a computer subsystem configured to detect defects in the one or more structures on the water using the output.

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