Copper plating apparatus, copper plating method and method for manufacturing semiconductor device

Abstract

A copper plating apparatus according to an embodiment includes a plating tank configured to have a copper member and a plating member being disposed in an interior of the plating tank, a blocking film configured to partition the interior of the plating tank into an anode chamber where the copper member is to be disposed and a cathode chamber where the plating member is to be disposed, the blocking film being configured to transmit copper ions and not transmit an additive agent, a supply unit configured to supply the additive agent to the anode chamber, and a power supply configured to apply a voltage between the copper member and the plating member.

What is claimed is: 
     
         1 . A copper plating apparatus, comprising:
 a plating tank configured to have a copper member and a plating member disposed in an interior of the plating tank;   a blocking film configured to partition the interior of the plating tank into an anode chamber where the copper member is to be disposed and a cathode chamber where the plating member is to be disposed, the blocking film being configured to transmit copper ions and not transmit an additive agent;   a supply unit configured to supply the additive agent to the anode chamber; and   a power supply configured to apply a voltage between the copper member and the plating member.   
     
     
         2 . The copper plating apparatus according to  claim 1 , further comprising:
 an anode-side circulation water path configured to circulate plating liquid for the anode chamber; and   a cathode-side circulation water path configured to circulate plating liquid for the cathode chamber,   the supply unit being configured to supply the additive agent to the anode-side circulation water path.   
     
     
         3 . The copper plating apparatus according to  claim 1 , wherein the blocking film is an ion exchange film. 
     
     
         4 . A copper plating method, comprising:
 disposing a copper member in an anode chamber of a plating tank, supplying plating liquid including an additive agent to the anode chamber, disposing a first plating member in a cathode chamber partitioned from the anode chamber by a blocking film configured to transmit copper ions and not transmit the additive agent, and supplying the plating liquid including the additive agent to the cathode chamber;   applying a voltage to cause the copper member to be positive and the first plating member to be negative to perform copper plating on the first plating member and form a black film at a surface of the copper member;   replacing the first plating member with a second plating member after the black film is formed; and   applying a voltage to cause the copper member to be positive and the second plating member to be negative to perform copper plating on the second plating member while supplying the additive agent to the cathode chamber without supplying the additive agent to the anode chamber.   
     
     
         5 . The copper plating method according to  claim 4 , wherein the additive agent contains an accelerator configured to promote the copper plating, a suppressor configured to suppress the copper plating, and a leveler configured to level a copper plating layer. 
     
     
         6 . The copper plating method according to  claim 4 , wherein the additive agent contains polyethylene glycol. 
     
     
         7 . The copper plating method according to  claim 4 , wherein the additive agent contains bis 3-sulfopropyl disulfide disodium. 
     
     
         8 . The copper plating method according to  claim 4 , wherein a concentration of the additive agent in the plating liquid supplied to the anode chamber in the supplying of the plating liquid is not less than 1 ppm. 
     
     
         9 . The copper plating method according to  claim 4 , wherein the plating amount for the first plating member in the forming of the black film is set to be not less than (S×14) coulombs, where the surface area of a region where the surface of the copper member contacts the plating liquid is S (cm 2 ). 
     
     
         10 . The copper plating method according to  claim 4 , wherein the second plating member is a silicon wafer. 
     
     
         11 . A method for manufacturing a semiconductor device, comprising:
 disposing a copper member in an anode chamber of a plating tank, supplying a plating liquid including an additive agent to the anode chamber, disposing a plating member in a cathode chamber partitioned from the anode chamber by a blocking film configured to transmit copper ions and not transmit the additive agent, and supplying the plating liquid including the additive agent to the cathode chamber;   applying a voltage to cause the copper member to be positive and the plating member to be negative to perform copper plating on the plating member and form a black film at a surface of the copper member;   replacing the plating member with a silicon wafer after the black film is formed; and   applying a voltage to cause the copper member to be positive and the silicon wafer to be negative to perform copper plating on the silicon wafer while supplying the additive agent to the cathode chamber without supplying the additive agent to the anode chamber.   
     
     
         12 . The method for manufacturing the semiconductor device according to  claim 11 , wherein the additive agent contains an accelerator configured to promote the copper plating, a suppressor configured to suppress the copper plating, and a leveler configured to level a copper plating layer. 
     
     
         13 . The method for manufacturing the semiconductor device according to  claim 11 , wherein the additive agent contains polyethylene glycol. 
     
     
         14 . The method for manufacturing the semiconductor device according to  claim 11 , wherein the additive agent contains bis 3-sulfopropyl disulfide disodium. 
     
     
         15 . The method for manufacturing the semiconductor device according to  claim 11 , wherein a concentration of the additive agent in the plating liquid supplied to the anode chamber in the supplying of the plating liquid is not less than 1 ppm. 
     
     
         16 . The method for manufacturing the semiconductor device according to  claim 11 , wherein the plating amount for the plating member in the forming of the black film is set to be not less than (S× 14 ) coulombs, where the surface area of a region where the surface of the copper member contacts the plating liquid is S (cm 2 ).