Device and method for forming a temperature gradient

Abstract

The invention relates to a device ( 1 ) for forming a temperature gradient, having at least one gas-tight working chamber ( 9 ) having a cathode ( 8 ) and an anode ( 7 ), wherein an inhomogeneous electric field can be generated when an electric voltage is applied between the cathode ( 8 ) and anode ( 7 ) in the working chamber ( 9 ), as well as a working gas between the cathode ( 8 ) and anode ( 7 ). According to the invention, a distance between the cathode ( 8 ) and anode ( 7 ) is less than 5000 nm in order to enable a heat transport from the anode ( 7 ) to the cathode ( 8 ) with the working gas. The invention further relates to a method for producing a device ( 1 ) to form a temperature gradient. The invention also relates to a method for forming a temperature gradient between a cathode ( 8 ) and an anode ( 7 ) in a working chamber ( 9 ) by means of a working gas in the working chamber ( 9 ), to which an inhomogeneous electric field is applied.

1 . Device for forming a temperature gradient, comprising at least one gastight working space ( 9 ) having a cathode ( 8 ) and an anode ( 7 ), wherein an inhomogeneous electric field can be produced when an electric voltage is applied between the cathode ( 8 ) and the anode ( 7 ) in the working space ( 9 ), as well as a working gas located between the cathode ( 8 ) and the anode ( 7 ), characterized in that a distance between the cathode ( 8 ) and the anode ( 7 ) is less than 5000 nm in order to enable a heat transport from the anode ( 7 ) to the cathode ( 8 ) with the working gas. 
     
     
         2 . Device according to  claim 1 , characterized in that a distance between the cathode ( 8 ) and the anode ( 7 ) is less than five times, preferably less than double, a free path length of the molecules or atoms of the working gas. 
     
     
         3 . Device according to  claim 1  characterized in that a distance between the cathode ( 8 ) and the anode ( 7 ) is less than a free path length of the molecules or atoms of the working gas. 
     
     
         4 . Device according to  claim 1 , characterized in that the distance between the cathode ( 8 ) and the anode ( 7 ) is less than 2000 nm, preferably less than 1000 nm, in particular approximately 500 nm. 
     
     
         5 . Device according to  claim 1 , characterized in that the working space ( 9 ) is delimited by a cover plate ( 3 ) and a base plate ( 2 ) which are at least partially composed of a dielectric ( 4 ). 
     
     
         6 . Device according to  claim 5 , characterized in that the dielectric ( 4 ) comprises a polymer, in particular a Parylene, and/or a photoresist. 
     
     
         7 . Device according to  claim 5 , characterized in that the base plate ( 2 ) and the cover plate ( 3 ) respectively comprise a substrate, preferably a silicon substrate, which is connected to the dielectric ( 4 ) via an electrically conductive planar electrode ( 6 ). 
     
     
         8 . Device according to  claim 1 , characterized in that the cathode ( 8 ) is formed as a wire electrode ( 15 ) which is in particular composed of gold. 
     
     
         9 . Device according to  claim 1 , characterized in that the at least one working space ( 9 ) has a roughly semicircular cross section. 
     
     
         10 . Device according to  claim 1 , characterized in that the at least one working space ( 9 ) is embodied in a hemispherical shape or in a roughly pyramidal shape. 
     
     
         11 . Device according to  claim 1 , characterized in that a cross section of the cathode ( 8 ) is less than 3%, preferably less than 1%, in particular less than 0.5%, of a cross section of the working space ( 9 ). 
     
     
         12 . Device according to  claim 1 , characterized in that multiple working spaces ( 9 ) are arranged next to one another, wherein the individual working spaces ( 9 ) are spatially connected to one another by bridges ( 13 ). 
     
     
         13 . Device according to  claim 12 , characterized in that the working spaces ( 9 ) arranged next to one another comprise a shared anode ( 7 ). 
     
     
         14 . Device according to  claim 12 , characterized in that the cathodes ( 8 ) of the working spaces ( 9 ) arranged next to one another are electrically connected to one another. 
     
     
         15 . Device according to  claim 1 , characterized in that multiple working spaces ( 9 ) are arranged serially on top of one another in multiple layers, wherein heat is transferable between the layers. 
     
     
         16 . Device according to  claim 15 , characterized in that the cathodes ( 8 ) of the individual layers and the anodes ( 7 ) of the individual layers are respectively electrically connected to one another. 
     
     
         17 . Method for producing a device ( 1 ) for forming a temperature gradient, wherein the device ( 1 ) is formed with at least one gastight working space ( 9 ) having a cover plate ( 3 ) with a cathode ( 8 ) and a base plate ( 2 ) with an anode ( 7 ) and a working gas located therebetween so that an inhomogeneous electric field can be produced when an electric voltage is applied between the anode ( 7 ) and the cathode ( 8 ) in the working space ( 9 ), characterized in that the cover plate ( 3 ) is arranged with a distance of less than 5000 nm to the base plate ( 2 ). 
     
     
         18 . Method according to  claim 17 , characterized in that the cover plate ( 3 ) is produced using a stamping die ( 14 ) produced in a galvanizing process. 
     
     
         19 . Method according to  claim 18 , characterized in that the stamping die ( 14 ) that is used comprises a galvanic structure ( 18 ) with a roughly semicircular cross section, wherein a radius of the roughly semicircular cross section is less than 5000 nm, preferably less than 1000 nm, in particular preferably between 100 nm and 800 nm, particularly approximately 350 nm. 
     
     
         20 . Method according to  claim 18 , characterized in that the stamping die ( 14 ) that is used comprises a metallization layer ( 19 ) with a metallization layer thickness ( 20 ) of less than 1000 nm, preferably less than 500 nm, in particular preferably between 50 nm and 300 nm, in particular approximately 100 nm. 
     
     
         21 . Method according to  claim 17 , characterized in that an electrically conductive planar electrode ( 6 ) is applied to a substrate to form the base plate ( 2 ) and the cover plate ( 3 ). 
     
     
         22 . Method according to  claim 21 , characterized in that a dielectric ( 4 ) is applied to the planar electrode ( 6 ). 
     
     
         23 . Method according to  claim 17 , characterized in that roughly flat planar electrodes ( 6 ) are applied to an essentially plate-shaped substrate layer ( 5 ) on two sides, which electrodes form electrodes of working spaces ( 9 ) positioned on top of one another. 
     
     
         24 . Method according to  claim 17 , characterized in that the cathode ( 8 ) is formed by a wire electrode ( 15 ) produced in a lift-off process. 
     
     
         25 . Method for forming a temperature gradient between a cathode ( 8 ) and an anode ( 7 ) in a working space ( 9 ) by means of a working gas located in the working space ( 9 ), to which gas an inhomogeneous electric field is applied, characterized in that molecules or atoms of the working gas carry out a molecular motion and thereby oscillate between the cathode ( 8 ) and the anode ( 7 ), wherein these molecules absorb energy at the anode ( 7 ) and release energy at the cathode ( 8 ). 
     
     
         26 . Method according to  claim 25 , characterized in that molecules or atoms of the working gas essentially only interact with the anode ( 7 ) and the cathode ( 8 ) of the working space ( 9 ). 
     
     
         27 . Method according to  claim 25 , characterized in that a working space ( 9 ) is used which comprises a distance between the anode ( 7 ) and the cathode ( 8 ) which is less than five times, preferably less than double, a free path length of the molecules or atoms of the working gas. 
     
     
         28 . Method according to  claim 25 , characterized in that a working space ( 9 ) is used which comprises a distance between the anode ( 7 ) and the cathode ( 8 ) which is less than the free path length of the molecules or atoms of the working gas. 
     
     
         29 . Method according to  claim 25 , characterized in that molecules or atoms of the working gas are accelerated from the anode ( 7 ) in the direction of the cathode ( 8 ) by the electric field. 
     
     
         30 . Method according to  claim 25 , characterized in that molecules or atoms of the working gas are decelerated at the cathode ( 8 ), wherein energy is released by the molecules or atoms to the cathode ( 8 ). 
     
     
         31 . Method according to  claim 25 , characterized in that a working gas is used which does not comprise a dipole moment. 
     
     
         32 . Method according to  claim 25 , characterized in that corresponding processes take place in multiple working spaces ( 9 ) positioned on top of one another, wherein a temperature difference between a bottommost and a topmost working space ( 9 ) is formed which is greater than the temperature difference that can be produced with a single working space ( 9 ).